Microprocessor package with first level die bump ground webbing structure

ABSTRACT

A ground isolation webbing structure package includes a top level with an upper interconnect layer having upper ground contacts, upper data signal contacts, and a conductive material upper ground webbing structure that is connected to the upper ground contacts and surrounds the upper data signal contacts. The upper contacts may be formed over and connected to via contacts or traces of a lower layer of the same interconnect level. The via contacts of the lower layer may be connected to upper contacts of a second interconnect level which may also have such webbing. There may also be at least a third interconnect level having such webbing. The webbing structure electrically isolates and reduces cross talk between the signal contacts, thus providing higher frequency and more accurate data signal transfer between devices such as integrated circuit (IC) chips attached to a package.

BACKGROUND Field

Embodiments of the invention are related in general, to semiconductordevice packaging and, in particular, to substrate packages and printedcircuit board (PCB) substrates upon which an integrated circuit (IC)chip may be attached, and methods for their manufacture. Such asubstrate package device may have a first level die bump design directlyattached to via contacts and conductive contacts extending through lowervertical levels of the package device.

Description of Related Art

Integrated circuit (IC) chips (e.g., “chips”, “dies”, “ICs” or “ICchips”), such as microprocessors, coprocessors, graphics processors andother microelectronic devices often use package devices (“packages”) tophysically and/or electronically attach the IC chip to a circuit board,such as a motherboard (or motherboard interface). The IC chip (e.g.,“die”) is typically mounted within a microelectronic substrate packagethat, among other functions, enables electrical connections between thedie and a socket, a motherboard, or another next-level component.

There is a need in the field for an inexpensive and high throughputprocess for manufacturing such packages. In addition, the process couldresult in a high package yield and a package of high mechanicalstability. Also needed in the field, is a package having bettercomponents for providing stable and clean power, ground, and highfrequency transmit and receive data signals between its top surface andother components of or attached to the package, such as from contacts onthe top surfaces that will be electrically connected through viacontacts to lower level contacts or traces of the package.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of the invention are illustrated by way of example andnot by way of limitation in the figures of the accompanying drawings inwhich like references indicate similar elements. It should be noted thatreferences to “an” or “one” embodiment of the invention in thisdisclosure are not necessarily to the same embodiment, and they mean atleast one.

FIG. 1 is a schematic top perspective view of a conductive materialground isolation webbing structure semiconductor device package uponwhich at least one integrated circuit (IC) chip or “die” may beattached.

FIG. 2A is a schematic cross-sectional side view of FIG. 1 showingground webbing structures as dashed “----” lines and showing data signalreceive and transmit interconnect stacks.

FIG. 2B is a schematic cross-sectional side view of FIG. 1 showingground webbing structures as solid lines and not showing data signalreceive and transmit interconnect stacks.

FIG. 3A is a schematic cross-sectional top view of the package of FIG. 1showing top or upper layer contacts of a top interconnect level; andshading representing one or more layers of ground webbing structure ofthe package.

FIG. 3B is a schematic cross-sectional top view of a ground webbingstructure package showing top or upper layer ground webbing structureportion 260 of a top interconnect level of the package.

FIG. 3C is a schematic cross-sectional top view of a ground webbingstructure package showing top layer or upper layer ground webbingstructure portion 262 of a second interconnect level of the package.

FIG. 3E is a schematic cross-sectional top view of a ground webbingstructure 20, package showing top layer or upper layer ground webbingstructure portion 266 of a fourth interconnect level of the package.

FIG. 3F is a schematic cross-sectional top view of a ground webbingstructure package showing top layer or upper layer ground plane portion368 of a fifth interconnect level of the package.

FIG. 3G is a schematic cross-sectional top view of a ground webbingstructure package showing top layer or upper layer power traces (orplane) layer of a sixth interconnect level of the package.

FIG. 4 is a flow chart illustrating a process for forming a groundwebbing structure package, according to embodiments described herein.

FIG. 5 is a schematic top perspective view of a conductive materialground isolation webbing structure semiconductor device package uponwhich two integrated circuit (IC) chip or “die” are attached.

FIG. 6 illustrates a computing device in accordance with oneimplementation.

DETAILED DESCRIPTION

Several embodiments of the invention with reference to the appendeddrawings are now explained. Whenever the shapes, relative positions andother aspects of the parts described in the embodiments are not clearlydefined, the scope of embodiments of the invention is not limited onlyto the parts shown, which are meant merely for the purpose ofillustration. Also, while numerous details are set forth, it isunderstood that some embodiments of the invention may be practicedwithout these details. In other instances, well-known circuits,structures, and techniques have not been shown in detail so as not toobscure the understanding of this description.

As integrated circuit (IC) chip or die sizes shrink and interconnectdensities increase, physical and electrical connections between the ICchip and a package upon or to which the IC chip is mounted requirebetter components for providing stable and clean power, ground, and highfrequency transmit and receive data signals between the package topsurface and other components of or attached to the package. Such signalsmay be transmitted between contacts on the top surfaces of the packagethat will be electrically connected through via contacts to lower levelcontacts or traces of the package. In some cases, the IC chip may bemounted on (e.g., physically soldered and attached to a top surface ofthe package) a microelectronic substrate package, which is alsophysically and electronically connected to the next-level component.

In some cases, the IC chip may be mounted within the package, such asfor “flip chip” bonding or packaging. In some cases, the IC chip may bemounted on a microelectronic substrate package, which is also physicallyand electronically connected to another IC chip, so that the package canprovide data signal transfer between two IC chips. Here, in many cases,the package must route hundreds or even thousands of high frequency datasignals between two die. Some such packages may be or use a siliconinterposer, a silicon bridge, or an organic interposer technology.

According to some embodiments, it is possible for such a package toprovide higher frequency and more accurate data signal transfer betweenan IC chip mounted on a top interconnect level of the package and (1)lower levels of the package, (2) a next-level component mounted on thepackage, or (3) another IC chip mounted on the package (e.g., mounted onthe top level) by including a top interconnect level (e.g., a die-bumpfield or a first level die bump design) with a ground webbing structure(e.g., “webbing”) of conductor material that reduces bump fieldcrosstalk, signal type cluster-to-cluster crosstalk and in-clustersignal type crosstalk. The ground webbing structure may be spread overan area of the top interconnect level of the package and may provideground isolation conductive material webbing that surrounds data signalcontacts of the top interconnect level. The top interconnect level mayhave upper transmit and receive data signal contacts of the die-bumpfield or a first level die bump design for soldering to another device;and the ground webbing structure may be attached to (or formed as partof conductor material layer with) upper grounding contacts to reducebump field crosstalk, signal type cluster-to-cluster crosstalk andin-cluster signal type crosstalk by surrounding each of the uppertransmit and receive data signal contacts. In some cases, there may beadditional lower levels of the package (below the first level) withadditional ground webbing structures, such as in a second interconnectlevel, and a third interconnect level of the package. Such a package(e.g., with the top interconnect level having the ground webbingstructure, and optionally one or more lower levels also having theground webbing structure) may be described as a first level die bump“ground webbing structure” microprocessor package (e.g., devices,systems and processes for forming).

In some cases, each interconnect level having a ground webbing structuremay have an upper (e.g., top or first) interconnect layer with upper(e.g., top or first) level ground contacts, upper level (e.g., top orfirst) data signal contacts, and a upper (e.g., top or first) levelground webbing structure that is directly connected (e.g., attached to,formed as part of, or electrically coupled to) to the upper level groundcontacts and surrounds the upper data signal contacts. The uppercontacts may be formed over and connected to via contacts or traces of alower layer of the same interconnect level. The via contacts of thelower layer may be connected to upper contacts of a second interconnectlevel (which may also have webbing). In some cases, the upper datasignal contacts include upper data transmit signal contacts in a datatransmit signal zone (or area from above view), and upper data receivesignal contacts in a data receive signal zone. In some cases, upperlevel power contacts are disposed adjacent to the upper level groundcontacts in a power and ground zone that is between the data transmitsignal zone and the data receive signal zone. In some cases, the groundwebbing structure extends from the upper ground contacts (1) through afirst side of the power and ground zone and into the data transmitsignal zone and surrounds the upper data transmit signal contacts; and(2) through an opposite side (e.g., opposite from the first side) of thepower and ground zone and into the data receive signal zone andsurrounds the upper data receive signal contacts.

In some cases, the ground webbing structure package may provide a bettercomponent for the physical and electrical connections between the ICchip and a package upon or to which the IC chip is mounted. In somecases, it may increase in the stability and cleanliness of power,ground, and high frequency transmit and receive data signals transmittedbetween the data signal contacts on the top surfaces of the package andother components of or attached to the package that are electricallyconnected to the data signal contacts on the top surface through viacontacts to lower level contacts or traces of the package. In somecases, it may increase the usable frequency of transmit and receive datasignals transmitted between the data signal contacts on the top surfacesof the package and other components of or attached to the package, ascompared to a package not having ground webbing (e.g., as compared to apackage where the top interconnect layer ground webbing structure doesnot exist). Such an increased frequency may include data signals havinga frequency of between 7 and 25 gigatransfers per second (GT/s). In somecases, GT/s may refer to a number of operations (e.g. transmission ofdigital data such as the data signal herein) transferring data thatoccur in each second in some given data transfer channel such as achannel provided by zone 102 or 104; or may refer to a sample rate, i.e.the number of data samples captured per second, each sample normallyoccurring at the clock edge. 1 GT/s is 10⁹ or one billion transfers persecond.

In some cases, the webbing structure package improves crosstalk (e.g.,as compared to the same package but without any webbing, such as withoutwebbing on levels L1-L3) from very low frequency transfer such as from50 mega hertz (MHz) to a GHz transfer level, such as greater than 40 GHz(or up to between 40 and 50 GHz). In some cases, the webbing structurepackage improves copper density in the package device (e.g., as comparedto the same package but without any webbing, such as without webbing onlevels L1-L3). In some cases, the webbing structure package enhances thepower delivery network for the input/output block (e.g., IO block suchas including zone 102 and 104) by improving (e.g., reducing resistanceof) the ground impedance (e.g., as compared to the same package butwithout any webbing, such as without webbing on levels L1-L3), whichhelps to reduce the IO power network impedance (e.g., lower theresistance of power contacts in zones 105 and 107), such as due to theIO power bumps (e.g., contacts 110 in zone 105 and/or 107) being locatedinside of the signal bumps (e.g., contacts 130 and 140).

FIG. 1 is a schematic top perspective view of a semiconductor devicepackage upon which at least one integrated circuit (IC) chip or “die”may be attached. FIG. 1 shows package 100 (e.g., a “package device”)having a first interconnect level L1 with upper layer 210 having upper(e.g., top or first) layer power contacts 110, upper layer groundisolation contacts 120, upper layer receive data signal contacts 130 andupper layer transmit data signal contacts 140. Level L1 (or upper layer210) may be considered to “top” layer such as a top, topmost or exposedlayer (e.g., a final build-up (BU) layer, BGA, LGA, or die-backend-likelayer) to which an IC chip (e.g., such as microprocessor, coprocessor,graphics processor, memory chip, modem chip, or other microelectronicchip devices), a socket, an interposer, a motherboard, or anothernext-level component will be mounted or directly attached.

In some cases, device 100 may represent a substrate package, aninterposer, a printed circuit board (PCB), a PCB an interposer, a“package”, a package device, a socket, an interposer, a motherboard, oranother substrate upon which integrated circuit (IC) chips or otherpackage devices may be attached (e.g., such as microprocessor,coprocessor, graphics processor, memory chip, modem chip, or othermicroelectronic chip devices).

FIG. 1 shows package 100 having top surface 106, such as a surface ofdielectric, upon or in which are formed (e.g., disposed) power contacts110, grounding contacts 120, receive signal contacts 130 and transmitcontacts 140. Power contacts 110 are shown in first row 170 as well asat certain locations along length LE1 in row 182.

Receive signal contacts 130 are shown in zone 102. Zone 102 has widthWE1 and length LE1. Ground contacts 120 are shown in second row 172 andat certain locations along length LE1 in seventh row 182. Receive signalcontacts 130 are shown in third row 174, fourth row 176, fifth row 178,and sixth row 180 in zone 102. In some cases, zone 102 may be describedas a receive or “RX” signal cluster formed in a 4-row deep die-bumppattern.

Transmit signal contacts 140 are shown in zone 104. Zone 104 has widthWE1 and length LE1. Transmit signal contacts 140 are shown in sixth row184, seventh row 186, eighth row 188, and ninth row 190 in zone 104. Insome cases, zone 104 may be described as a receive or “TX” signalcluster formed in a 4-row deep die-bump pattern. Various otherappropriate patterns are considered for contacts 120, 130 and 140. Itcan be appreciated that although zone 102 and 104 are shown with thesame width and length, they may have different widths and/or lengths.Each of rows 170-190 may be horizontally (e.g., widthwise) equidistantfrom each other along the direction of width WE1, and each of thecontacts in each row may be vertically (e.g., lengthwise) equidistantfrom each other along length LE1.

The exact size of WE1 and LE1 may depend on number of contacts employedwithin each zone (e.g., number of contacts 130 in zone 102, or thenumber of contact 140 in zone 104). In some cases, the size of WE1 andLE1 may also depend on the number of zones 102 and 104 on a packagedevice. In some cases, the number of zones 102 and 104 will be whereeach of those zones is part of a “unicel” or “unit cell” communicationarea (e.g., including zones 102, 104, 105 and 107) and there are between2-20 such unicel areas on the surface of the package (and thus between2-20 of each of zones 102 and 104). In some cases, the size of WE1 andLE1 can be scaled with or depend on the manufacturing or processingpitch (e.g., of the contacts).

The size of WE1 and LE1 may also depend on the technology capability offorming the contacts and package. In some cases, in general, the size ofWE1 and LE1 can span from around a hundred to a couple of hundredmicrometers (×E-6 meter—“um” or “microns”). In some cases, LE1 isbetween 80 and 250 um. In some cases it is between 50 and 300 um. Insome cases, WE1 is between 70 and 150 um. In some cases it is between 40and 200 um.

Rows 170 and 172 may be described as a two row wide power and groundisolation zone 105. Zone 102 may be described as a four row wide zone ofreceive contacts. Zone 104 a four row wide zone of transmit contacts.Row 182 may be described as a one row wide power and ground isolationzone 107 located or formed between zone 102 and zone 104. Zone 107 hasside 181 adjacent to or facing zone 102 and opposite side 183 (e.g.,opposite from side 181) adjacent to or facing zone 104. In some cases,the location of zone 105 and zone 107 are reversed and the two row powerand isolation zone is located between zone 102 and zone 104; and hassides 181 and 183.

Zone 105 has width WE2 and length LE1. Zone 107 has width WE3 and lengthLE1. The exact size of WE2 and WE3 may depend on number of contactsemployed within each zone (e.g., number of contacts in zone 105, and inzone 107). In some cases, the size of WE2 and WE3 may also depend on thenumber of zones 105 and 107 on a package device. In some cases, thenumber of zones 105 and 107 will be where each of those zones is part ofa “unicel” communication area (e.g., including zones 102, 104, 105 and107) and there are between 2-20 such unicel areas on the surface of thepackage (and thus between 2-20 of each of zones 105 and 107). In somecases, the size of WE2 and WE3 can be scaled with or depend on themanufacturing or processing pitch (e.g., of the contacts).

The size of WE2 and WE3 may also depend on the technology capability offorming the contacts and package. In some cases, in general, the size ofWE2 and WE3 can span from around tens of microns to more than a hundredum. In some cases, WE2 is between 35 and 75 um. In some cases it isbetween 20 and 100 um. In some cases, WE3 is between 15 and 30 um. Insome cases it is between 8 and 40 um. It can be appreciated thatalthough zone 105 and 107 are shown with widths WE 2 and WE3; and thesame length, they may have different widths and/or lengths.

In some cases, zone 107 (or zone 105 when zone 105 is located where zone107 is shown) may be described as one (e.g., zone 107) or two (e.g.,zone 105) rows of ground bumps that isolate the TX cluster (e.g., zone104) and the RX cluster (e.g., zone 102).

The pitch width (PW) of adjacent contacts is the width distance betweenthe center point of two adjacent contacts. In some cases, pitch PW isapproximately 153 micrometers (153×E-6 meter—“um”). In some cases, pitchPW is approximately 160 micrometers. In some cases, it is between 140and 175 micrometers. The diagonal pitch (PD) of adjacent contacts is thediagonal distance between the center of two adjacent contacts. In somecases, pitch PD is approximately 110 micrometers (110×E-6 meter—“um”).In some cases, pitch PD is approximately 130 micrometers. In some cases,it is between 100 and 140 micrometers (um). In some cases, it is between60 and 200 micrometers. The pitch length (PL) of two adjacent contactsis the length distance between the center point of two adjacentcontacts. In some cases, pitch PL is approximately 158 micrometers. Insome cases, pitch PL is approximately 206 micrometers. In some cases, itis between 130 and 240 micrometers (um). In some cases, pitch PD isapproximately 110 micrometers, PL is approximately 158 micrometers andPW is approximately 153 micrometers. In some cases, pitch PD isapproximately 130 micrometers, PL is approximately 206 micrometers andPW is approximately 160 micrometers. In the cases above, “approximately”may represent a difference of within plus or minus 5 percent of thenumber stated. In other cases, it may represent a difference of withinplus or minus 10 percent of the number stated.

According to embodiments, level L1 may include upper (e.g., top, topmostor first) layer ground webbing structure 160 (not shown in FIG. 1), suchas shown in FIGS. 2-3.

FIG. 2A is a schematic cross-sectional side view of the package of FIG.1 showing ground Webbing structures 160, 162 and 164 as dashed “----”lines and showing data signal receive and transmit interconnect stacksor rows 174 and 184. FIG. 2B is a schematic cross-sectional side view ofthe package of FIG. 1 showing ground webbing structures 160, 162 and 164as solid lines and not showing data signal receive and transmitinterconnect stacks or rows 174 and 184. FIGS. 2A-B show package 100 topor topmost (e.g., first level) interconnect level L1 is formed oversecond level interconnect level L2, which is formed over thirdinterconnect level L3, which is formed over fourth interconnect levelL4, which is formed over fifth interconnect level L5, which is formedover fifth interconnect level L6. In FIGS. 2A-B, data signal receiveinterconnect stack 274 may represent the interconnect stack (e.g., uppercontacts and via contacts of multiple levels of levels L1-L5) of each ofrows 174-180 of FIGS. 1 and 3. In some cases, stack 274 may representall the interconnect stack of rows 174-180 of FIGS. 1 and 3. Also, inFIGS. 2A-B, data signal transmit interconnect stack 284 may representthe interconnect stack (e.g., upper contacts and via contacts ofmultiple levels of levels L1-L5) of each of rows 184-190 of FIGS. 1 and3. In some cases, stack 284 may represent all the interconnect stack ofrows 184-190 of FIGS. 1 and 3.

FIG. 2A shows package device 100 having level L1 which is shown withlayer 210 having dielectric 103; contacts 110, 120, 130 and 140; andground webbing 160 which may be directly attached to and electricallycoupled to contacts 120 of layer 210. Level L1 is also shown with layer212 having dielectric 103; and contacts 112, 122, 132 and 142. Level L2is shown with layer 220 having contacts 110, 120 and 130; ground webbing162 which may be directly attached to and electrically coupled tocontacts 120 of layer 220; and signal trace 148 which may be directlyattached to and electrically coupled to contacts 142 of layer 212. LevelL2 is also shown with layer 222 having dielectric 103; and contacts 112,122 and 132. Level L3 is shown with layer 230 having contacts 110, 120and 130; ground webbing 164 which may be directly attached to andelectrically coupled to contacts 120 of layer 230; and ground trace (orplane) 128 which may be directly attached to and electrically coupled tocontacts 122 of layer 222. Level L3 is also shown with layer 232 havingdielectric 103; and contacts 112, 122 and 132. Level L4 is shown withlayer 240 having contacts 110 and 120; and signal trace 138 which may bedirectly attached to and electrically coupled to contacts 132 of layer232. Level L4 is also shown with layer 242 having dielectric 103; andcontacts 112 and 122. Level L5 is shown with layer 250 having contacts110; and ground trace (or plane) 128 which may be directly attached toand electrically coupled to contacts 122 of layer 242. Level L5 is alsoshown with layer 252 having dielectric 103; and contacts 112. Level L6is shown with a layer having power trace (or plane) 118 which may bedirectly attached to and electrically coupled to contacts 112 of layer252. Level L6 may include other structure or various layers not shown,such as described below.

Below level L6, package 100 may include various interconnect layers,packaging layers, conductive features (e.g., electronic devices,interconnects, layers having conductive traces, layers having conductivevias), layers having dielectric material and other layers as known inthe industry for a semiconductor device package. In some cases, thepackage may be cored or coreless. In some cases, the package includesfeatures formed according to a standard package substrate formationprocesses and tools such as those that include or use: lamination ofdielectric layers such as ajinomoto build up films (ABF), laser ormechanical drilling to form vias in the dielectric films, lamination andphotolithographic patterning of dry film resist (DFR), plating ofconductive traces (CT) such as copper (Cu) traces, and other build-uplayer and surface finish processes to form layers of electronicconductive traces, electronic conductive vias and dielectric material onone or both surfaces (e.g., top and bottom surfaces) of a substratepanel or peel able core panel. The substrate may be a substrate used inan electronic device package or a microprocessor package.

In some cases, any or all of levels L1-L5 may also include suchstructures noted above for package 100, thought not shown in FIGS. 1-3.In some cases, the contacts and/or traces of levels L1-L5 areelectrically connected to (e.g., physically attached to or formed onto)the conductive structures noted above for package 100.

Row 170 is shown having power interconnect levels L1-L5. In someembodiments, row 170 has fewer or more interconnect levels than L1-L5.Each of levels L1-L5 may have at least one power interconnect stack witha power upper contact 110 (e.g., of an upper of the level such as layer210 of level L1) formed over or onto a power via contact 112 (e.g., of alower layer of the level such as layer 212 of level L1) such that thetwo contacts are directly attached (e.g., touching) and electricallycoupled to each other. Each layers power via contact 112 (e.g., of thelower layer of the level) may be formed over or onto an power uppercontact 110 of the level below (e.g., of an upper layer of the levelbelow such as layer 220 of level L2), such that the two contacts aredirectly attached (e.g., touching) and electrically coupled to eachother. Each power upper contact 110 may have width, or diameter W1 andheight H1. Each power via contact 112 may have top width W2, bottomwidth W3, and height H2. These widths and height may be the same foreach power upper contact and power via contact of interconnect levelsL1-L5. Power via contact 112 of level L5 (e.g., of the lowest power vialevel of an interconnect stack) is formed over or onto power signaltrace 118 such that the via contact is directly attached (e.g.,touching) and electrically coupled to power signal trace 118. Trace 118has height H4 and width W6. It can be appreciated that power contacts110 and 112; and trace 118 may have width and/or height less than orgreater than those mentioned above.

Zones 102, 104, 105 and 107 (and levels L1-L5) may have features havingstandard package pitch as known for a semiconductor die package, chippackage; or for another device (e.g., interface, PCB, or interposer)typically connecting a die (e.g., IC, chip, processor, or centralprocessing unit) to a socket, a motherboard, or another next-levelcomponent.

In some cases, height H1 may be approximately 15 micrometers (15×E-6meter—“um”) and width W1 is between 75 and 85 um. In some cases, heightH1 is between 10 and 20 micrometers (um). In some cases, it is between 5and 30 micrometers. In some cases, width W1 is between 70 and 90micrometers (um). In some cases, it is between 60 and 110 micrometers.It can be appreciated that height H1 may be an appropriate height of aconductive material contacts formed on a top layer of or within apackage device, that is less than or greater than those mentioned above.

In some cases, H2 is approximately 25 micrometers, width W2 is between65 and 75 urn, and width W3 is between 30 and 50 um. In some cases,height H2 is between 20 and 30 micrometers (um). In some cases, it isbetween 10 and 40 micrometers. It can be appreciated that height H1 maybe an appropriate height of a conductive material via contact within apackage device, that is less than or greater than those mentioned above.In some cases, width W2 is between 60 and 85 micrometers (um). In somecases, it is between 50 and 90 micrometers. In some cases, width W3 isbetween 20 and 50 micrometers (um). In some cases, it is between 10 and60 micrometers.

In some cases, height H4 may be approximately 15 micrometers (15×E-6meter—“um”) and width W6 is between 1 millimeter (mm) and 20 mm. In somecases, height H4 is between 10 and 20 micrometers (um). In some cases,it is between 5 and 30 micrometers. It can be appreciated that height H4may be an appropriate height of a conductive material grounding plane orwebbing within a package device for reducing cross talk and forisolating signal contacts, that is less than or greater than thosementioned above. In some cases, width W6 can span an entire width of adie or chip.

Row 172 is shown having ground isolation interconnect levels L1-L4. Insome embodiments, row 172 has fewer or more interconnect levels thanL1-L4. Each of levels L1-L4 may have at least one ground isolationinterconnect stack with an ground isolation upper contact 120 (e.g., ofan upper of the level such as layer 210 of level L1) formed over or ontoa ground isolation via contact 122 (e.g., of a lower layer of the levelsuch as layer 212 of level L1) such that the two contacts are directlyattached (e.g., touching) and electrically coupled to, each other. Eachlayers ground isolation via contact 122 (e.g., of the lower layer of thelevel) may be formed over or onto a ground isolation upper contact 120of the level below (e.g., of an upper layer of the level below such aslayer 220 of level L2), such that the two contacts are directly attached(e.g., touching) and electrically coupled to each other. Each groundisolation upper contact 120 may have width, or diameter W1 and heightH1. Each ground isolation via contact 122 may have top width W2, bottomwidth W3, and height H2. These widths and height may be the same foreach ground isolation upper contact and ground isolation via contact ofinterconnect levels L1-L4. Ground isolation via contact 122 of level L4(e.g., of the lowest ground isolation via level of an interconnectstack) is formed over or onto ground isolation signal trace 128 suchthat the via contact is directly attached (e.g., touching) andelectrically coupled to ground isolation signal trace 128. Trace 128 hasheight H4 and may have a width such as width W6. It can be appreciatedthat ground isolation contacts 120 and 122; and trace 128 may have widthand/or height less than or greater than those mentioned above.

Row 174 is shown having receive data signal interconnect levels L1-L3.In some embodiments, row 174 has fewer or more interconnect levels thanL1-L3. Each of levels L1-L3 may have at least one receive data signalinterconnect stack with an receive data signal upper contact 130 (e.g.,of an upper of the level such as layer 210 of level L1) formed over oronto a receive data signal via contact 132 (e.g., of a lower layer ofthe level such as layer 212 of level L1) such that the two contacts aredirectly attached (e.g., touching) and electrically coupled to eachother. Each layers receive data signal via contact 132 (e.g., of thelower layer of the level) may be formed over or onto a receive datasignal upper contact 130 of the level below (e.g., of an upper layer ofthe level below such as layer 220 of level L2), such that the twocontacts are directly attached (e.g., touching) and electrically coupledto each other. Each receive data signal upper contact 130 may havewidth, or diameter W1 and height H1. Each receive data signal viacontact 132 may have top width W2, bottom width W3, and height H2. Thesewidths and height may be the same for each receive data signal uppercontact and receive data signal via contact of interconnect levelsL1-L3. Receive data signal via contact 132 of level L3 (e.g., of thelowest receive data signal via level of an interconnect stack) is formedover or onto receive data signal trace 138 such that the via contact isdirectly attached (e.g., touching) and electrically coupled to receivedata signal trace 138. Trace 138 has height H4 and may have a width suchas width W6. It can be appreciated that receive data signal contacts 130and 132; and trace 138 may have width and/or height less than or greaterthan those mentioned above.

FIGS. 2A-B show only stack 274 of rows 174-180. However, it can beappreciated that stack 274 can represent any one of rows 174-180. Insome cases, stack 274 of FIGS. 2A-B is an example of all the rows174-180 of FIGS. 1 and 3.

Row 182 is shown having ground isolation interconnect levels L1-L2. Insome embodiments, row 182 has fewer or more interconnect levels thanL1-L2. In some embodiments, row 182 has power interconnect stacks inlevels L1-L2 as well as ground isolation interconnect stacks in levelsL1-L2. Each of levels L1-L2 may have at least one ground isolationinterconnect stack with an ground isolation upper contact 120 formedover or onto a ground isolation via contact 122, which is formed over oronto an ground isolation upper contact 120 of the layer below, as notedfor row 172. These may be formed as noted for row 172. Ground isolationvia contact 122 of level L2 (e.g., of the lowest ground isolation vialevel of an interconnect stack) is formed over or onto ground isolationsignal trace 128 as noted for row 172. It can be appreciated that groundisolation contacts 120 and 122; and trace 128 of row 182 may have widthand/or height as noted for row 172.

Row 184 is shown having transmit data signal interconnect level L1. Insome embodiments, row 184 has more interconnect levels than L1. Level L1may have at least one transmit data signal interconnect stack with antransmit data signal upper contact 140 (e.g., of an upper of the levelsuch as layer 210 of level L1) formed over or onto a transmit datasignal via contact 142 (e.g., of a lower layer of the level such aslayer 212 of level L1) such that the two contacts are directly attached(e.g., touching) and electrically coupled to each other. Each layerstransmit data signal via contact 142 (e.g., of the lower layer of thelevel) may be formed over or onto a transmit data signal upper contact140 of the level below (e.g., of an upper layer of the level below suchas layer 220 of level L2), such that the two contacts are directlyattached (e.g., touching) and electrically coupled to each other. Eachtransmit data signal upper contact 140 may have width, or diameter W1and height H1. Each transmit data signal via contact 142 may have topwidth W2, bottom width W3, and height H2. These widths and height may bethe same for each transmit data signal upper contact and transmit datasignal via contact of any other transmit data signal layers exist in row184. Transmit data signal via contact 142 of level L1 (e.g., of thelowest transmit data signal via level of an interconnect stack) isformed over or onto transmit data signal trace 148 such that the viacontact is directly attached (e.g., touching) and electrically coupledto transmit data signal trace 148. Trace 148 has height H4 and may havea width such as width W6. It can be appreciated that transmit datasignal contacts 140 and 142; and trace 148 may have width and/or heightless than or greater than those mentioned above.

FIGS. 2A-B show only stack 284 of rows 184-190. However, it can beappreciated that stack 284 can represent any one of rows 184-190. Insome cases, stack 284 and FIGS. 2A-B is an example of all the rows184-190 of FIGS. 1 and 3.

FIGS. 2A-B show pitch width PW between rows 170 and 172. It can beappreciated that the same pitch width may apply to each of adjacent rowsof rows 172-190.

FIG. 2B shows dielectric portions 103 a in layer 210 between any of(e.g., occupying space not occupied by) upper contacts 110, 120, 130,140, traces, and webbing 160 of layer 210. It also shows dielectricportions 103 b in layer 212 between any of via contacts 112, 122, 132,142 and traces of layer 212. It also shows dielectric portions 103 c inlayer 220 between any of upper contacts 110, 120, 130, 140, traces, andwebbing 162 of layer 220. It also shows dielectric portions 103 d inlayer 222 between any of via contacts 112, 122, 132, 142 and traces oflayer 222. It also shows dielectric portions 103 e in layer 230 betweenany of upper contacts 110, 120, 130, 140, traces, and webbing 164 oflayer 230. It also shows dielectric portions 103 f in layer 232 betweenany of via contacts 112, 122, 132, 142 and traces of layer 232.Dielectrics 103 a, 103 b, 103 c, 103 d, 103 e, and 103 f may be adielectric as described for dielectric 103.

According to some embodiments, contacts 110, 120, 130 and 140; traces;dielectric layers or portions; and webbing 160 of level L1 may bedescribed as “first level” power contacts 110, ground isolation contacts120, data signal receive contacts 130 and data signal transmit contacts140; traces; dielectric layers or portions; and webbing, respectively.For example, contact 120 of level L1 may be described as a “first levelground contact”. Also, according to some embodiments, via contacts 112,122, 132 and 142; traces; dielectric layers or portions; and webbing 162of level L2 may be described as “second level” power via contacts 112,ground isolation via contacts 122, data signal receive via contacts 132and data signal transmit via contacts 142; traces; dielectric layers orportions; and webbing, respectively. For example, via contact 122 oflevel L1 may be described as a “first level ground via contact”. In somecases, these descriptions also repeat for level L2 (e.g., “second level. . . contacts”), level L3 (“third level . . . contacts”), level L4(e.g., “fourth level . . . contacts”), and level L5 (“fifth level . . .contacts”).

FIG. 3A is a schematic cross-sectional top view of the package of FIG. 1showing top or upper layer contacts of a top or typical interconnectlevel; and shading representing one typical layer of ground webbingstructure of the package. FIG. 3A shows package 100 having zone 102 withcontacts 130 in rows 174-180. It shows zone 104 having contacts 140 inrows 184-190. It shows zone 105 having contacts 110 in row 170 andcontacts 120 in row 172. It shows zone 107 having contacts 110 and 120in row 182.

FIG. 3A shows shading 310 representing ground webbing structure 310 thatmay represent all or a portion of structures 160, 162 or 164 at levelsL1, L2 or L3. FIG. 3A shows webbing structure 310 such as a layer ofsolid conductor material extending between any or all of (e.g.,occupying space not occupied by) width W4 of dielectric portions 103 asurrounding upper contacts 110, 130, 140, traces, and ties (e.g., inlayer 210).

In some cases, ground webbing structures 160, 162, and 164 may bedescribed as conductive ground webbing structures in die-bump fields orzones 102, 104, 105 and 107 to reduce bump field crosstalk,cluster-to-cluster crosstalk and in-cluster crosstalk of zones 102, 104,105 and 107. This is described further below.

Row 170 shows locations 340 such as areas between contacts 110 andsurrounding ground webbing structure 310 where no webbing exists.Examples of locations 340 are indicated by no shading color. Forexample, the brightest areas of FIG. 3A, around contacts 110 of row 170,do not have any ground webbing structure for a distance of W4 aroundeach contact which is between the edge of a contact and the inner edgeof all of the webbing structure 310. Here, webbing 310 surroundscontacts 110 in row 170 at a distance of width W4 (e.g., are width W4away from the edges of contacts 110). In some cases, width W4 isapproximately 12 micrometers. In some cases, it is between 10 and 20micrometers (um). In some cases, it is between 8 and 30 micrometers. Insome cases, it is between 12 and 50 micrometers.

Rows 172 and 182 show areas in rows 172 and 182 that have structure 310,such as where one of webbings 160, 162 or 164 exist. Examples ofstructure 310 are indicated by the shading.

Also, row 182 shows locations 320 such as an area between contacts 110and surrounding ground webbing structure 310 or where no webbing exists.Examples of locations 320 are indicated by no shading color. Forexample, the brightest areas of FIG. 3A, around contacts 110 of row 182,do not have any ground webbing structure for a distance of W4 aroundeach contact which is between the edge of a contact and the inner edgeof all of the webbing structure 310. Here, webbing 310 surroundscontacts 110 in row 182 at a distance of width W4 (e.g., are width W4away from the edges of contacts 110).

Zone 102 (e.g., rows 174-180) shows structure 310, such as where one ofwebbings 160, 162 or 164 exist. Examples of structure 310 are indicatedby the shading. Zone 102 (e.g., rows 174-180) also show locations 330such as an area between contacts 130 and surrounding ground webbingstructure where no webbing exists. Examples of locations 330 areindicated by no shading color. For example, the brightest areas of FIG.3A, around contacts 130 of rows 174-180, do not have any ground webbingstructure for a distance of W4 around each contact which is between theedge of a contact and the inner edge of all of the webbing structure310. Here, webbing 310 surrounds contacts 130 in rows 174-180 at adistance of width W4 (e.g., are width W4 away from the edges of contacts130).

Zone 104 (e.g., rows 184-190) shows structure 310, such as where one ofwebbings 160, 162 or 164 exist. Zone 104 (e.g., rows 184-190) also showslocations 320 such as an area between contacts 140 and surroundingground webbing structure where no webbing exists. Examples of locations320 are indicated by no shading color. For example, the brightest areasof FIG. 3A, around contact's 140 of rows 184-190, do not have any groundwebbing structure for a distance of W4 around each contact which isbetween the edge of a contact and the inner edge of all of the webbingstructure 310. Here, webbing 310 surrounds contacts 140 in rows 184-190at a distance of width W4 (e.g., are width W4 away from the edges ofcontacts 140).

FIG. 3A also shows width W8 of webbing structure 310 between side byside, adjacent contacts. W8 may represent a width of solid conductormaterial or webbing of webbing 310 (e.g., representing the same forwebbing 160, 162 or 164) that is disposed between two side by side,adjacent contacts from a top perspective view (e.g., along pitch widthPW), and that surrounds the contacts by distance W4. In some cases,width W8 is approximately 12 micrometers. In some cases, it is between10 and 20 micrometers (um). In some cases, it is between 8 and 30micrometers. In some cases, it is between 12 and 50 micrometers. WidthW8 may exist for webbing 160, 162 and 164.

Next, FIG. 3A shows width W9 of webbing structure 310 between diagonallyadjacent contacts. W9 may represent a width of solid conductor materialor webbing of webbing 310 (e.g., representing the same for webbing 160,162 or 164) that is disposed between two diagonally adjacent contacts(e.g., along diagonal pitch PD), and that surrounds the contacts bydistance W4. In some cases, width W9 is approximately 12 micrometers. Insome cases, it is between 10 and 20 micrometers (um). In some cases, itis between 8 and 30 micrometers. In some cases, it is between 12 and 50micrometers. Width W9 may exist for webbing 160, 162 and 164.

Also, FIG. 3A shows width W10 of webbing structure 310 between upper andlower, adjacent contacts. W10 may represent a width of solid conductormaterial or webbing of webbing 310 (e.g., representing the same forwebbing 160, 162 or 164) that is disposed between two upper and lower,adjacent contacts (e.g., along length pitch PL), and that surrounds thecontacts by distance W4. In some cases, width W10 is approximately 75micrometers. In some cases, it is between 60 and 90 micrometers (um). Insome cases, it is between 50 and 110 micrometers. In some cases, it isbetween 40 and 130 micrometers. Width W10 may exist for webbing 160, 162and 164.

FIGS. 2A-B show embodiments of ground webbing structures 160, 162, and164 at levels L1, L2, and L3. FIG. 3A show embodiments of ground webbingstructures 310 which may represent any or all of structures 160, 162,and 164 at levels L1, L2, and L3. FIGS. 2A-B show ground webbing layer160 that may be formed along, or under top surface 106. Ground webbing160 has height H5 and width W5. In some cases height H5 is equal toheight H1. Ground webbing 160 may be an upper (e.g., top or first) layerof conductive material that is formed as part of, touching, andelectrically coupled to upper ground contacts 120 of upper layer 210 oflevel L1. In some cases, webbing 160 is an upper layer of conductivematerial that is formed during the same deposition or plating used toform upper contacts 120 of level L1. In some cases, webbing 160 contactsmany or most of the upper contacts 120 of level L1. In some cases,webbing 160 contacts all of upper contacts 120 of level L1. Webbingstructure 160 may be a layer of solid conductor material extendingbetween all of (e.g., occupying space not occupied by) width W4 ofdielectric portions 103 a surrounding upper contacts 110, 130, 140, andany traces of layer 210.

In some cases, height H5 may be approximately 15 micrometers (15×E-6meter—“um”) and width W5 is between 1 millimeter (mm) and 20 mm. In somecases, height H5 is between 10 and 20 micrometers (um). In some cases,it is between 5 and 30 micrometers. In some cases, width W5 can span anentire width of a die or chip.

For example, ground isolation webbing structure 160 is shown by thedashed lines (e.g., “-----”) in upper layer 210 of level L1 of FIG. 2A;by the shaded height H5 in FIG. 2B; and by shading of webbing structure310 in FIG. 3A. Structure 160 is an upper (e.g., top, topmost or first)level L1 (or layer 210) ground webbing structure. In some cases, webbingstructure 160 is formed (e.g., disposed) having top surfaces that arepart of or horizontally planar with surface 106, such as by being formedwith or as part of layer 210 having conductor (1) that includes contacts110, 120, 130 and 140 of level L1; and (2) between which dielectric 103of layer 210 exists (having top surface 106). In some cases, webbingstructure 160 is formed (e.g., disposed) above top surface 106, such aswhere the layer of conductor is formed on or over a layer of dielectricor other material. In some cases, webbing structure 160 is formed (e.g.,disposed) under top surface 106, such as when a further layer ofdielectric, solder resist, or other material is formed on level L1, overwebbing 160.

FIGS. 2A-B show ground webbing layer 162 formed along an upper surfaceof dielectric upon which upper contacts of level L2 are formed. Groundwebbing 162 has height H5 and width W5. Ground webbing 162 may be anupper (e.g., top or first) layer of conductive material that is formedas part of, touching, and electrically coupled to upper ground contacts120 of upper layer 220 of level L2. In some cases, webbing 162 is anupper layer of conductive material that is formed during the samedeposition or plating used to form upper contacts 120 of level L2. Insome cases, webbing 162 contacts many or most of the upper contacts 120of level L2. In some cases, webbing 160 contacts all of upper contacts120 of level L2. Webbing structure 162 may be a layer of solid conductormaterial extending between all of (e.g., occupying space not occupiedby) width W4 of dielectric portions 103 a surrounding any of uppercontacts 110, 130, 140, and traces 148 of layer 220.

For example, ground isolation webbing structure 162 is shown by thedashed lines (e.g., “-----”) in upper layer 220 of level L2 of FIG. 2A;by the shaded height H5 in FIG. 2B; and by shading of webbing structure310 in FIG. 3A. Structure 162 is a second or secondmost level L2 (orlayer 220) ground webbing structure. In some cases, webbing structure162 is formed (e.g., disposed) having top surfaces that are part of orhorizontally planar with a top surface of level L2, such as by beingformed with or as part of layer 220 having conductor (1) that includesupper contacts 110, 120, 130 and trace 148 of level L2; and (2) betweenwhich dielectric 103 of layer 220 exists. In some cases, webbingstructure 162 is formed (e.g., disposed) under top surface 106, byheight H2, such as due to having level L1 formed over webbing 162.

FIGS. 2A-B show ground webbing layer 164 formed along an upper surfaceof dielectric upon which upper contacts of level L3 are formed. Groundwebbing 164 has height H5 and width W5. Ground webbing 164 may be anupper (e.g., top or first) layer of conductive material that is formedas part of, touching, and electrically coupled to upper ground contacts120 of upper layer 230 of level L3. In some cases, webbing 164 is anupper layer of conductive material that is formed during the samedeposition or plating used to form upper contacts 120 of level L3. Insome cases, webbing 164 contacts many or most of the upper contacts 120of level L3. In some cases, webbing 164 contacts all of upper contacts120 of level L3. Webbing structure 164 may be a layer of solid conductormaterial extending between all of (e.g., occupying space not occupiedby) width W4 of dielectric portions 103 a surrounding any of uppercontacts 110, 130, 140, and traces 128 of layer 230.

For example, ground isolation webbing structure 164 is shown by thedashed lines (e.g., “-----”) in upper layer 230 of level L3 of FIG. 2A;by the shaded height H5 in FIG. 2B; and by shading of webbing structure310 in FIG. 3A. Structure 164 is a third or thirdmost level L3 (or layer230) ground webbing structure. In some cases, webbing structure 164 isformed (e.g., disposed) having top surfaces that are part of orhorizontally planar with a top surface of level L3, such as by beingformed with or as part of layer 230 having conductor (1) that includesupper contacts 110, 120, 130 and trace 128 of level L3; and (2) betweenwhich dielectric 103 of layer 230 exists. In some cases, webbingstructure 164 is formed (e.g., disposed) under top surface 106, byheight (2×H2 plus 2×H1), such as due to having levels L1 and L2 formedover webbing 164.

FIG. 3B is a schematic cross-sectional top view of a ground webbingstructure package showing top or upper layer ground webbing structureportion 260 of a top interconnect level of the package. In some cases,package 300 is package 100, such as by having zones 102, 104, 105 and107 at levels L1-L6. In some cases it is a package similar to package100 except that the ground webbing structures 160, 162 and 164 aredescribed as ground webbing portions 260, 262 and 264, respectively. Insome cases it is a package similar to package 100 except that the groundwebbing structures 160, 162 and 164 are described as the combination ofground webbing portion 260 and plane 360; ground webbing portion 262 andplane 362; and ground webbing portion 264 and plane 364, respectively.

FIG. 3B may be a top perspective view of layer 210 of device 300. Itshows layer 210 having power contacts 110, ground contacts 120, receivedsignal contacts 130, transmit signal contacts 140, ground webbingportion 260, and ground plane portion 360. FIG. 3B also shows layer 210having zone 102 with contacts 130 in rows 174-180. It shows zone 104having contacts 140 in rows 184-190. It shows zone 105 having contacts110 in row 170 and contacts 120 in row 172. It shows zone 107 havingcontacts 110 and 120 in row 182. It shows layer 210 having groundwebbing portion 260 directly attached to and electrically coupled tocontacts 120 of layer 210. It shows layer 210 having ground planeportion 360 directly attached to (e.g., formed with) and electricallycoupled to webbing portion 260. In some cases, contacts 110 of layer 210in zones 105 and 107 are tied together in layer 210 by power signal ties350 (e.g., conductor material, such as metal or copper, ties directlyattached to and extending between adjacent ones of contacts 110) asshown. Webbing portion 260 may be a layer of solid conductor materialextending between all of (e.g., occupying space not occupied by) a widthof dielectric material surrounding upper contacts 110, 130, 140, and anyties of layer 210. Plane portion 360 may be a layer of solid conductormaterial extending around and physically attached to (e.g., formed withor as part of) portion 260.

In some cases, portion 260 may be the same as webbing 160 (e.g., thesame device, formed the same way and having the same function andcapabilities as webbing 160). In some cases, the combination of portion260 and portion 360 may be the same as webbing 160. In some cases, thedescriptions for webbing 160 describe portion 260; and portion 360 is aground plane that has inner edges formed with, extending from, directlyattached to, and electrically coupled to (e.g., with zero resistance)the outer edges of portion 260. In FIG. 3B, portion 260 may exist in allof zones 102, 104, 105 and 107. In some cases, portion 260 may cover anarea equal to at least width (WE2+2WE1+WE3)×length LE1.

FIG. 3B shows all of the openings in webbing portion 260 of zone 102having contacts 130. However, it can be appreciated that fewer than all,such as half (or one third or two thirds) of all of the openings inwebbing portion 260 of zone 102 may have contacts 130. Also, it can beappreciated that in some embodiments, webbing portion 260 may onlyextends across half of zone 102 (e.g., across only half of width WE1 ofzone 102) and in this case only half of all of the openings shown inwebbing portion 260 of zone 102 have contacts 130 (not shown, butaccomplished by removing half of width WE1 of webbing portion 260 andcontacts 130 with ground plane portion 360 in zone 102).

FIG. 3B also shows all of the openings in webbing portion 260 of zone104 having contacts 140. However, it can be appreciated that fewer thanall, such as half (or one third or two thirds) of all of the openings inwebbing portion 260 of zone 104 may have contacts 140. Also, it can beappreciated that in some embodiments, webbing portion 260 may onlyextends across half of zone 104 (e.g., across only half of width WE1 ofzone 104) and in this case only half of all of the openings shown inwebbing portion 260 of zone 104 have contacts 140 (not shown, butaccomplished by removing half of width WE1 of webbing portion 260 andcontacts 140 with ground plane portion 360 in zone 104).

FIG. 3C is a schematic cross-sectional top view of a ground webbingstructure package showing top layer or upper layer ground webbingstructure portion 262 of a second interconnect level of the package.FIG. 3C may be a top perspective view of layer 220 of device 300. Insome cases, layer 210 of FIG. 3B is formed upon or onto layer 212 (e.g.,see FIGS. 2A-B) which is formed upon or onto layer 220 of FIG. 3C. FIG.3C shows layer 220 having power contacts 110, ground contacts 120,received signal contacts 130, transmit signal contacts 140, groundwebbing portion 262, ground plane portion 362, and signal traces 148which may be directly attached to and electrically coupled to contacts140 of layer 220. Webbing portion 262 may be a layer of solid conductormaterial extending between all of (e.g., occupying space not occupiedby) a width of dielectric material surrounding upper contacts 110, 130and any traces and ties of layer 220. Plane portion 362 may be a layerof solid conductor material extending around and physically attached to(e.g., formed with or as part of) portion 262.

FIG. 3C also shows layer 220 having zone 102 with contacts 130 in rows174-180. It shows zone 104 having contacts 140 in rows 184-190. It showszone 105 having contacts 110 in row 170 and contacts 120 in row 172. Itshows zone 107 having contacts 110 and 120 in row 182. It shows layer220 having ground webbing portion 262 directly attached to andelectrically coupled to contacts 120 of layer 220. It shows layer 220having ground plane portion 362 directly attached to (e.g., formed with)and electrically coupled to webbing portion 262. In some cases, contacts110 of layer 220 in zone 105 (and optionally zone 107, now shown butremoving portion 262 from between those two contacts 110 such as shownin FIG. 3B) are tied together in layer 220 by power signal ties (e.g.,conductor material, such as metal, ties directly attached to andextending between adjacent ones of contacts 110) as shown.

In some cases, portion 262 may be the same as webbing 162 (e.g., thesame device, formed the same way and having the same function andcapabilities as webbing 162). In some cases, the combination of portion262 and portion 362 may be the same as webbing 162. In some cases, thedescriptions for webbing 162 describe portion 262; and portion 362 is aground plane that has inner edges formed with, extending from, directlyattached to, and electrically coupled to (e.g., with zero resistance)the outer edges of portion 262. In FIG. 3C, portion 262 may exist in allof zones 102, 105 and 107 (but not in zone 104). In some cases, portion262 may cover an area equal to at least width (WE2+WE1+WE3)×length LE1.

FIG. 3C shows all of the openings in webbing portion 262 of zone 102having contacts 130. However, it can be appreciated that fewer than all,such as half (or one third or two thirds) of all of the openings inwebbing portion 262 of zone 102 may have contacts 130. Also, it can beappreciated that in some embodiments, webbing portion 262 may onlyextends across half of zone 102 (e.g., across only half of width WE1 ofzone 102) and in this case only half of all of the openings shown inwebbing portion 262 of zone 102 have contacts 130 (not shown, butaccomplished by removing half of width WE1 of webbing portion 262 andcontacts 130 with ground plane portion 362 in zone 102).

FIG. 3C shows all of zone 104 having contacts 140. However, it can beappreciated that fewer than all, such as half (or one third or twothirds) of all of zone 104 may have contacts 140. Also, it can beappreciated that in some embodiments, zone 104 only extends across halfof shown zone 104 (e.g., across only half of width WE1 of zone 104) andin this case only half of all of shown zone 104 has contacts 140 (notshown, but accomplished by replacing half of width WE1 of contacts 140with ground plane portion 362 in zone 104).

FIG. 3D is a schematic cross-sectional top view of a ground webbingstructure package showing top layer or upper layer ground webbingstructure portion 264 of a third interconnect level of the package. FIG.3D may be a top perspective view of layer 230 of device 300. In somecases, layer 220 of FIG. 3C is formed upon or onto layer 222 (e.g., seeFIGS. 2A-B) which is formed upon or onto layer 230 of FIG. 3D. FIG. 3Dshows layer 230 having power contacts 110, ground contacts 120, transmitsignal contacts 140, ground webbing portion 264, and ground planeportion 364. Webbing portion 264 may be a layer of solid conductormaterial extending between all of (e.g., occupying space not occupiedby) a width of dielectric material surrounding upper contacts 110, 130,and any ties of layer 230. Plane portion 364 may be a layer of solidconductor material extending around and physically attached to (e.g.,formed with or as part of) portion 264.

FIG. 3D also shows layer 230 having zone 102 with contacts 130 in rows174-180. It shows zone 104 having ground plane portion 364 in rows184-190. It shows zone 105 having contacts 110 in row 170 and contacts120 in row 172. It shows zone 107 having contacts 110 and 120 in row182. It shows layer 230 having ground webbing portion 264 directlyattached to and electrically coupled to contacts 120 of layer 230. Itshows layer 230 having ground plane portion 364 directly attached to(e.g., formed with) and electrically coupled to webbing portion 264. Insome cases, contacts 110 of layer 230 in zone 105 (and optionally zone107, now shown but removing portion 264 from between those two contacts110 such as shown in FIG. 3B) are tied together in layer 230 by powersignal ties (e.g., conductor material, such as metal, ties directlyattached to and extending between adjacent ones of contacts 110) asshown.

In some cases, portion 264 may be the same as webbing 164 (e.g., thesame device, formed the same way and having the same function andcapabilities as webbing 164). In some cases, the combination of portion264 and portion 364 may be the same as webbing 164. In some cases, thedescriptions for webbing 164 describe portion 264; and portion 364 is aground plane that has inner edges formed with, extending from, directlyattached to, and electrically coupled to (e.g., with zero resistance)the outer edges of portion 264. In FIG. 3D, portion 264 may exist onlyin of zones 102, 105 and 107 (e.g., but not in zone 104 where groundplane portion 364 exists). In some cases, portion 264 may cover an areaequal to at least width (WE2+WE1+WE3)×length LE1.

FIG. 3D shows all of the openings in webbing portion 264 of zone 102having contacts 130. However, it can be appreciated that fewer than all,such as half (or one third or two thirds) of all of the openings inwebbing portion 264 of zone 102 may have contacts 130. Also, it can beappreciated that in some embodiments, webbing portion 264 may onlyextends across half of zone 102 (e.g., across only half of width WE1 ofzone 102) and in this case only half of all of the openings shown inwebbing portion 264 of zone 102 have contacts 130 (not shown, butaccomplished by removing half of width WE1 of webbing portion 264 andcontacts 130 with ground plane portion 364 in zone 102).

FIG. 3E is a schematic cross-sectional top view of a ground webbingstructure package showing top layer or upper layer ground plane portion366 of a fourth interconnect level of the package. FIG. 3E may be a topperspective view of layer 240 of device 300. In some cases, layer 230 ofFIG. 3D is formed upon or onto layer 232 (e.g., see FIGS. 2A-B) which isformed upon or onto layer 240 of FIG. 3E. FIG. 3E shows layer 240 havingpower contacts 110, ground contacts 120, received signal contacts 130,ground plane portion 366, and signal traces 138 which may be directlyattached to and electrically coupled to contacts 130 of layer 240. Planeportion 366 may be a layer of solid conductor material extending aroundand physically surrounding a width of dielectric material surroundingupper contacts 110, 130, and any ties and traces of layer 240.

FIG. 3E also shows layer 240 having zone 102 with contacts 130 in rows174-180. It shows zone 104 having signal traces 138 in rows 184-190. Itshows zone 105 having contacts 110 in row 170 and contacts 120 in row172. It shows zone 107 having contacts 110 and 120 in row 182. It showslayer 240 having portion 366 directly attached to and electricallycoupled to contacts 120 of layer 240. In some cases, contacts 110 oflayer 240 in zone 105 (but not zone 107) are tied together in layer 240by power signal ties (e.g., conductor material, such as metal, tiesdirectly attached to and extending between adjacent ones of contacts110) as shown. In some cases, portion 366 is a ground plane that hasinner edges formed with, extending from, directly attached to, andelectrically coupled to (e.g., with zero resistance) the outer edges ofcontacts 120 of zone 102. In FIG. 3E, portion 366 may exist in all ofzone 105.

FIG. 3E shows all of zone 102 having contacts 130. However, it can beappreciated that fewer than all, such as half (or one third or twothirds) of all of zone 102 may have contacts 130. Also, it can beappreciated that in some embodiments, zone 102 only extends across halfof shown zone 102 (e.g., across only half of width WE1 of zone 102) andin this case only half of all of shown zone 102 has contacts 130 (notshown, but accomplished by replacing half of width WE1 of contacts 130with ground plane portion 366 in zone 102).

FIG. 3F is a schematic cross-sectional top view of a ground webbingstructure package showing top layer or upper layer ground plane portion368 of a fifth interconnect level of the package. FIG. 3F may be a topperspective view of layer 250 of device 300. In some cases, layer 240 ofFIG. 3E is formed upon or onto layer 242 (e.g., see FIGS. 2A-B) which isformed upon or onto layer 250 of FIG. 3F. FIG. 3F shows layer 250 havingpower contacts 110, ground contacts 120 and ground plane portion 368.Plane portion 368 may be a layer of solid conductor material extendingaround and physically surrounding a width of dielectric materialsurrounding upper contacts 110 and any ties and traces of layer 250.

FIG. 3F also shows layer 250 having zone 102 with ground plane portion368 in rows 174-180. It shows zone 104 having ground plane portion 368in rows 184-190. It shows zone 105 having contacts 110 in row 170 andcontacts 120 in row 172. It shows zone 107 having contacts 110 and 120in row 182. It shows layer 250 having ground plane portion 368 directlyattached to (e.g., formed with) and electrically coupled to contacts120. In some cases, contacts 110 of layer 250 are tied together in layer250 in zone 105 (and optionally zone 107, now shown but removing portion368 from between those two contacts 110 such as shown in FIG. 3B) bypower signal ties (e.g., conductor material, such as metal, tiesdirectly attached to and extending between adjacent ones of contacts110) as shown.

In some cases, portion 368 is a ground plane that has inner edges formedwith, extending from, directly attached to, and electrically coupled to(e.g., with zero resistance) the outer edges of contacts 120. In somecases, portion 368 represents the ground traces 128 of level L5 as shownin FIGS. 1-2B.

FIG. 3G is a schematic cross-sectional top view of a ground webbingstructure package showing top layer or upper layer power plane layer ofa sixth interconnect level of the package. FIG. 3G may be a topperspective view of a layer having power plane 318 which may be directlyattached to and electrically coupled to contacts 110 of that layer. Insome cases, layer 250 of FIG. 3F is formed upon or onto layer 252 (e.g.,see FIGS. 2A-B) which is formed upon or onto the layer of FIG. 3G. FIG.3F shows a layer having power contacts 110 of the tied together in thatlayer by power plane 318 (e.g., conductor material (such as a metal)plane or layer directly attached to and extending between adjacent onesof contacts 110 as shown. Plane 318 may be a layer of solid conductormaterial extending around and physically attached to (e.g., formed with)upper contacts 130 and any ties and traces of that layer.

FIG. 3G also shows a layer having zone 102 with power plane 318 in rows170-190. It shows power plane 318 directly attached to (e.g., formedwith) and electrically coupled to contacts 110. In some cases, plane 318is a power plane that has inner edges formed with, extending from,directly attached to, and electrically coupled to (e.g., with zeroresistance) the outer edges of contacts 110. In some cases, power plane318 represents power traces 118 of level L6 as shown in FIGS. 1-2B.

Webbing structures 160, 162 and 164 are each electronically coupled to(e.g., touching, formed with, or directly attached to) ground contacts120 of rows 172 and 182 of levels L1, L2 and L3, respectively. They alsoeach surround the data signal contacts (e.g., any existing contacts 130and 140 by distance W4) of levels L1, L2 and L3, respectively. It mayalso surround the power contacts 110 of levels L1, L2 and L3,respectively. The power contacts may be disposed adjacent to the groundcontacts 120 in a power and ground zone (e.g., 105 or 107) that isbetween the data transmit signal zone 104 and the data receive signalzone 102 of levels L1, L2 and L3. In some cases, webbing structures 160,162 and 164 each extend from the ground contacts 120 of levels L1, L2and L3, respectively (1) through a first side 183 of the power andground zone (e.g., zone 105 or 107) and into the data transmit signalzone 104 and surrounds the data transmit signal contacts 140 of levelsL1, L2 and L3, respectively; and (2) through an opposite side 181 (e.g.,opposite from the first side) of the power and ground zone and into thedata receive signal zone 102 and surrounds the data receive signalcontacts 130 of levels L1, L2 and L3, respectively. In some cases,ground webbing structures 160, 162 and 164 each extend along the sameplanar surface as the upper contacts (e.g., contacts 110, 120, 130 and140) of levels L1, L2 and L3, respectively.

In some cases, contacts 110, 112 and traces 118 are used to transmit orprovide power signals to an IC chip or other device attached to contacts110 of Level L1. In some cases they are used to provide an alternatingcurrent (AC) or a direct current (DC) power signal (e.g., Vdd). In somecases the signal has a voltage of between 0.5 and 2.0 volts. In somecases it is a different voltage level.

In some cases, contacts 120, 122 and traces 128 are used to transmit orprovide grounding (e.g., isolation) signals to an IC chip or otherdevice attached to contacts 120 of Level L1. In some cases they are usedto provide a zero voltage direct current (DC) grounding signal (e.g.,GND). In some cases the signal has a voltage of between 0.0 and 0.2volts. In some cases it is a different but grounding voltage level.

In some cases, contacts 130, 132 and traces 138 are used to transmit orprovide a receive data signal from an IC chip or other device attachedto contacts 130 of Level L1. In some cases they are used to provide analternating current (AC) or high frequency (HF) receive data signal(e.g., RX). In some cases the signal has a frequency of between 7 and 25GT/s; and a voltage of between 0.5 and 2.0 volts. In some cases thesignal has a frequency of between 6 and 15 GT. In some cases the signalhas a voltage of between 0.4 and 5.0 volts. In some cases it is adifferent frequency and/or voltage level.

In some cases, contacts 140, 142 and traces 148 are used to transmit orprovide a transmit data signal to an IC chip or other device attached tocontacts 140 of Level L1. In some cases they are used to provide analternating current (AC) or high frequency (HF) transmit data signal(e.g., TRX). In some cases the signal has a frequency of between 7 and25 GT/s; and a voltage of between 0.5 and 2.0 volts. In some cases thesignal has a frequency of between 6 and 15 GT. In some cases the signalhas a voltage of between 0.4 and 5.0 volts. In some cases it is adifferent frequency and/or voltage level.

Webbing structures 160, 162 and 164 may each provide a ground isolationwebbing structure across all of zones 102, 104, 105 and 107 of levelsL1, L2 and L3, respectively, that reduces “die bump field” crosstalkbetween all adjacent ones of contacts 110, 120, 130 and/or 140surrounded by webbings 160, 162 and 164 of levels L1, L2 and L3,respectively. They may also each provide a ground isolation webbingstructure between each of zones 102, 104, 105 and 107 of levels L1, L2and L3, respectively, that reduces “cluster to cluster” crosstalkbetween all adjacent ones of zones 102, 104, 105 and 107 surrounded bywebbings 160, 162 and 164 of levels L1, L2 and L3, respectively.

They may also each provide a ground isolation webbing structure withineach of zones 102, 104, 105 and 107 of levels L1, L2 and L3,respectively, that reduces “in-cluster” crosstalk between all adjacentones of contacts 110, 120, 130 or 140 in each of one 102, 104, 105 or107 surrounded by webbings 160, 162 and 164 of levels L1, L2 and L3,respectively.

For example, by being layers of conductive material electricallyconnected to the ground contacts 120, ground isolation webbings 160, 162and 164 may provide electrically grounded layers having openings throughwhich contacts 110, 130, and 140 exist or are disposed. In some cases,webbings 160, 162 and 164 absorb, or shield electromagnetic crosstalksignals produced by one contact, from reaching an adjacent contact oflevels L1, L2 and L3, respectively, due to the amount of groundedconductive material, and location of the conductive grounded materialadjacent to (e.g., surrounding at a distance of W4) the power contacts110, receive contacts 130, and transmit contacts 140 of levels L1, L2and L3, respectively.

In some cases, any of ground isolation webbings 160, 162 or 164 reduceelectrical crosstalk caused by undesired capacitive, inductive, orconductive coupling of a first signal received or transmitted throughone of contacts 110, 130, and 140 effecting or being mirrored in asecond signal received or transmitted through another, different one ofcontacts 110, 130, and 140 on the game level of levels L1-L5. In somecases, they reduce such electrical crosstalk of a first signal receivedor transmitted through one of contacts 130, and 140 effecting or beingmirrored in a second signal received or transmitted through another,different one of contacts 130, and 140 on the same level of levelsL1-L5. In some cases, they reduce such electrical crosstalk of such afirst signal effecting or being mirrored in such a second signal on adifferent level of levels L1-L5, such as effecting or being mirrored ina second signal of an adjacent level (e.g., level L1 and L3 are adjacentto level L2). In some cases, each (or all) of ground isolation webbings160, 162 and 164 reduce such electrical crosstalk from such a firstsignal effecting or being mirrored in such a second signal. In somecases, any or each of ground isolation webbings 160, 162 and 164 alsoreduce such electrical crosstalk from such a first signal received ortransmitted through one of contacts 112, 132, and 142 effecting or beingmirrored in such a second signal received or transmitted throughanother, different one of contacts 112, 132, and 142 on the same ordifferent level of levels L1-L5 as noted above for contacts 110, 130,and 140.

Such electrical crosstalk may include interference caused by two signalsbecoming partially superimposed on each other due to electromagnetic(inductive) or electrostatic (capacitive) coupling between the contacts(e.g., conductive material) carrying the signals. Such electricalcrosstalk may include where the magnetic field from changing currentflow of a first data signal in one contact of contacts 130, 132, 140 or142 (or trace 138 or 148) in levels L1-L5 as noted above induces currentin a second data signal in one contact of contacts 130, 132, 140 or 142(or trace 138 or 148) in levels L1-L5. The first and second signals maybe flowing in contacts or traces running parallel to each other, as in atransformer.

In some embodiments, any or each of ground isolation webbings 160, 162or 164 reduce electrical crosstalk as noted above (1) without increasingthe distance or spacing between the contacts (or traces) noted above,(2) without increasing the distance or spacing between the any of LevelsL1-L5, (3) without re-ordering any of the contacts (or traces) notedabove or Levels L1-L5. In some cases, this is due to using any or eachof ground isolation webbings 160, 162 or 164 as shielding between any ofthe contacts (or traces) noted above or Levels L1-L5.

In some embodiments, level L4 will not have any ground webbing. In someembodiments, level L5 will include a solid ground plane or layer (e.g.,such as replacing trace 128). In some embodiments, level L6, below levelL5 will be a solid planar ground layer (e.g., electrically coupled togrounding interconnects of rows 172 and/or 182). In some embodiments,level L2 or L3 will only have ground webbing 162 and 164 in zone 102 or104. In some embodiments, level L2 or L3 will have no ground webbing 162and 164 (e.g., only webbing 160 exists). In some embodiments, only levelL1 and L3 will have ground webbing 160 and 164. In some embodiments,they will only have it in zones 102 and 103.

In some cases, a solder resist layer is formed over level L1. Such aresist may be a height (e.g., thickness) of solid non-conductive solderresist material. Such material may be or include an epoxy, an ink, aresin material, a dry resist material, a fiber base material, a glassfiber base material, a cyanate resin and/or a prepolymer thereof; anepoxy resin, a phenoxy resin, an imidazole compound, an arylalkylenetype epoxy resin or the like as known for such a solder resist. In somecases it is an epoxy or a resin.

The resist may be a blanket layer that is masked and etched to formopenings where solder can be formed on and attached to the uppercontacts (e.g., contacts 110, 120, 130 and 140), or where contacts ofanther device (e.g., a chip) can be soldered to the upper contacts.Alternatively, the resist may be a layer that is formed on a mask, andthe mask then removed to form the openings. In some cases, the resistmay be a material (e.g., epoxy) liquid that is silkscreened through orsprayed onto a pattern (e.g., mask) formed on the package; and the maskthen removed (e.g., dissolved or burned) to form the openings. In somecases, the resist may be a liquid photoimageable solder mask (LPSM) inkor a dry film photoimageable solder mask (DFSM) blanket layer sprayedonto the package; and then masked and exposed to a pattern and developedto form the openings. In some cases, the resist goes through a thermalcure of some type after the openings (e.g., pattern) are defined. Insome cases the resist is laser scribed to form the openings. In somecases, the resist may be formed by a process known to form such a resistof a package.

In some embodiments, features of level L1-L5 (e.g., contacts, viacontacts and ground webbing) may have a pitch (e.g., such as defined asPW, PL, PD; and/or as an average of the height of contacts or layers)that is determined by a standard package design rule (DR) or chippackage as known. In some cases, that pitch is a line spacing (e.g., theactual value of the line widths and spaces between lines on the layers)or design rules (DR) of a feature (e.g., conductive contact, or trace)that is between 9 and 12 micrometers. In some cases, that pitch allowsfor “flip chip” bonding (e.g., using solder in solder resist openingsover level L1) also known as controlled collapse chip connection (C4)bump scaling such as for interconnecting semiconductor devices, such asIC chips and microelectromechanical systems (MEMS), to externalcircuitry with solder bumps that have been deposited onto the chip pads.In some cases, that pitch is a bump pitch of (e.g., using solder in theopenings) between 130 micrometers and 200 micrometers.

Upper contacts 110 and via contacts 112 (e.g., of layers 210-252) may beheight H1 (e.g., a thickness) and H2 (e.g., a thickness) respectively;and trace 118 may be height H4 (e.g., a thickness) of solid conductivematerial. Also, the other upper contacts (e.g., contacts 120, 130 and140) may be height H1; the other via contacts (e.g., contacts 122, 132and 142) may be height H4; and the other traces (e.g., traces 128, 138and 148) may be height H4 of solid conductive material.

In some cases, webbings 160, 162 and 164 (e.g., of layers 210, 220 and230) are also height H5 (e.g., a thickness) of solid conductivematerial. The conductive material may be a pure conductor (e.g., a metalor pure conductive material). Such material may be or include copper(Cu), gold, silver, bronze, nickel, silver, aluminum, molybdenum, analloy, or the like as known for such a contact. In some cases, they areall copper.

In some cases, the contacts, traces and webbing may be formed as ablanket layer of conductor material (e.g., a pure conductive material)that is masked and etched to form openings where dielectric materialwill be deposited, grown or formed (and leave portions of the conductormaterial where the contacts, traces and webbing are now formed).Alternatively, the conductor material may be a layer that is formed inopenings existing through a patterned mask, and the mask then removed(e.g., dissolved or burned) to form the contacts, traces and webbing.Such forming of the contacts, traces and webbing may include or bedepositing the conductor material such as by chemical vapor deposition(CVD) or by atomic layer deposition (ALD); or growing the conductormaterial such as an electrolytic layer of metal or conductor grown froma seed layer of electroless metal or conductor to form the contacts,traces and webbing.

In some cases, the contacts and traces may be formed by a process knownto form such contacts and traces of a package or chip package device. Insome cases, the webbings may be formed by a process known to formcontacts and traces of a package or chip package device.

Layers of dielectric 103 (e.g., layers 103 a-103 f; and/or of layers210-252) may each be a height H1 for an upper layer and height H2 for alower layer of each level L1-L5 (e.g., H1 plus H2 per each level) ofsolid non-conductive material. The dielectric material may be a purenon-conductor (e.g., an oxide or pure non-conductive material). Suchmaterial may be or include silicon nitride, silicon dioxide, porcelain,glass, plastic, or the like as known for such a dielectric. In somecases it is silicon nitride.

In some cases, the dielectric may be a blanket layer of dielectricmaterial (e.g., a non-conductive insulator material) that is masked andetched to form openings where the contacts, traces and webbing aredeposited, grown or formed. Alternatively, the dielectric may be a layerthat is formed on a patterned mask, and the mask then removed (e.g.,dissolved or burned) to form openings where the contacts, traces andwebbing are deposited, grown or formed. Such forming of the dielectriclayer, or portions may include or be depositing the dielectric materialsuch as by chemical vapor deposition (CVD) or by atomic layer deposition(ALD); or growing the dielectric material such as from or on a lowersurface of a dielectric material (e.g., that may be the same type ofmaterial or a different type of dielectric material) to form the layeror portions. In some cases, the dielectric layer, portions of dielectricstructure, or openings in dielectric layer may be formed by a processknown to form such dielectric of a package or chip package device.

In some cases, the mask used may be a material formed on a surface(e.g., of a layer); and then having a pattern of the mask removed (e.g.,dissolved, developed or burned) to form the openings where the conductormaterial (or dielectric) are to be formed. In some cases, the mask maybe patterned using photolithography. In some cases, the mask may beliquid photoimageable “wet” mask or a dry film photoimageable “dry” maskblanket layer sprayed onto the surface; and then masked and exposed to apattern of light (e.g., the mask is exposed to light where a template ofthe pattern placed over the mask does not block the light) and developedto form the openings. Depending on the mask type, the exposed orunexposed areas are removed. In some cases, the mask goes through athermal cure of some type after the openings (e.g., pattern) aredefined. In some cases, the mask may be formed by a process known toform such a mask of a chip package, or device formed using a chippackage POR.

FIG. 4 is a flow chart illustrating a process for forming a conductivematerial ground webbing structure package, according to embodimentsdescribed herein. FIG. 4 shows process 400 which may be a process forforming embodiments described herein of package 100 of any of FIGS. 1-3and 5. In some cases, process 400 is a process for forming a groundwebbing structure package that includes a first interconnect level withan upper (e.g., top or first) interconnect layer with upper level groundcontacts, upper level data signal contacts, and a upper level groundwebbing structure that is directly connected (e.g., attached to, formedas part of, or electrically coupled to) to the upper level groundcontacts and surrounds the upper data signal contacts.

Process 400 begins at optional block 410 at which a lower layer of afirst interconnect level of a chip package is formed, having first levelground via contacts over and attached to upper ground contacts of asecond interconnect level, and first level data signal via contacts overand attached to upper data signal contacts of the second interconnectlevels of the chip package.

Block 410 may include forming lower layer 212 of a first interconnectlevel L1 of a chip package 100 having (1) conductive material firstlevel ground via contacts 122 attached to conductive material upperground contacts 120 of an upper layer 220 of a second interconnect levelL2; and (2) conductive material first level data signal via contacts 132and 142 attached to conductive material upper data signal contacts 130and 140 of an upper layer 220 of a second interconnect level L2.

Block 410 may include forming via contacts 112, 122, 132, 142 and/ortraces of a lower layer 121, 222, 232, 242 or 252 of any interconnectlevel of levels L1-L5, respectively, as described herein. It may alsoinclude forming dielectric 103 b of a lower layer 121, 222, 232, 242 or252 of any interconnect level of levels L1-L5, respectively, asdescribed herein.

In some cases, block 410 may include forming contacts and traces asdescribed herein, such as to form via contacts 112, 122, 132, and/or142. In some cases, block 410 may include forming dielectric asdescribed herein, such as to form dielectric portions 103 b.

In some cases, block 410 may include (e.g., prior to block 420) forminglower layer 212 of first interconnect level L1 having first level groundvia contacts 122 and first level data signal via contacts 132 and 142 oflevel L1; where the first level ground via contacts 122 attach firstlevel upper ground contacts 120 of level L1 to second level upper groundcontacts 120 of level L2; the first level upper data signal via contacts132 and 142 attach the first level upper data signal contacts 130 and140 to second level upper data signal contacts 130 and 140 of secondinterconnection level L2 disposed below level L1; and level L2 hassecond level ground webbing structure 162 directly connected to thesecond level upper ground contacts 120 and surrounding the second levelupper data signal contacts 130 and 140 of level L2.

After block 410, block 420 is performed. Block 420 may include or beforming an upper layer of the first interconnect level of the chippackage having (1) conductive material first level upper ground contactsformed over and attached to the conductive material first level groundvia contacts of the lower layer of the first interconnect level, (2)conductive material first level upper data signal contacts formed overand attached to the conductive material first level data signal viacontacts of the lower layer of the first interconnect level, and (3) aconductive material first level ground webbing structure (a) overdielectric of the lower layer of the first interconnect level, (b)directly connected to the first level upper ground contacts and (c)surrounding the first level upper data signal contacts of the firstinterconnect level.

In some cases, the ground webbing may be formed directly onto, as partof, or touching the outer edges of the upper ground contacts of thefirst interconnect level L1. In some cases the ground webbing isphysically attached to and electrically coupled by conductor material tothe upper ground contacts.

Block 420 may include forming upper layer 210 of the first interconnectlevel L1 of the chip package 100, layer 210 having (1) conductivematerial first level upper ground contacts 120 formed over and attachedto the conductive material first level ground via contacts 122 of thelower layer 220 of the first interconnect level L1, (2) conductivematerial first level upper data signal contacts 130 and 140 formed overand attached to the conductive material first level data signal viacontacts 132 and 142 of the lower layer 220 of the first interconnectlevel L1, and (3) a conductive material first level ground webbingstructure 160: (a) over dielectric 103 b of the lower layer 220 of thefirst interconnect level L1, (b) directly connected to the first levelupper ground contacts 120 and (c) surrounding the first level upper datasignal contacts 130 and 140 of the first interconnect level L1.

Block 420 may include forming upper contacts 110, 120, 130, 140 and/ortraces of an upper layer 120, 220, 230, 240 or 250 of any interconnectlevel of levels L1-L5, respectively, as described herein. It may alsoinclude forming dielectric 103 a of an upper layer 120, 220, 230, 240 or250 of any interconnect level of levels L1-L5, respectively, asdescribed herein.

In some cases, block 420 may include forming contacts and traces asdescribed herein, such as to form upper contacts 110, 120, 130, and/or140. In some cases, block 420 may include forming dielectric asdescribed herein, such as to form dielectric portions 103 a.

In some cases, block 420 may include forming a conductive materialground webbing structure package 100 by forming upper layer 210 of afirst interconnect level L1 having conductive material first level upperground contacts 120, conductive material first level upper data signalcontacts 130 and 140, and conductive material first level ground webbingstructure webbing 160, where the first level ground webbing structure160 is directly connected to the first level ground contacts 120 andsurrounds the first level data signal contacts 130 and 140.

A first example embodiments of block 420 may include (e.g., prior toforming the upper Payer 210 of the first interconnect level), forming amask (e.g., DFR, not shown) over a top surface of a lower layer 212 ofthe first interconnect level L1, the mask having (1) first openings overground via contacts 122 of the lower layer 212 and in which to form thefirst level upper ground contacts 120 of Level L1, (2) second openingsover data signal via contacts 132 and 142 of the lower layer 212 and inwhich to form the first level upper data signal contacts 130 and 140 ofLevel L1, and (3) third openings over dielectric 103 b of the lowerlayer 212 and in which to form the first level ground webbing structure160. In this case, the first openings may be horizontally open to and incommunication with the third openings. Some of these cases may includeelectroless plating of a seed layer of the conductor material, prior toforming the masks layer.

In this case, block 420 may then include simultaneously formingconductive material (e.g., plating on the exposed seed layer of theopenings) to form the first level upper ground contacts 120 in the firstopenings, the first level upper data signal contacts 130 and 140 in thesecond openings, and the first level ground webbing structure 160 in thethird openings of Level L1.

In some of these cases, simultaneously forming the conductive materialmay include forming that conductive material of the contacts 120, 130and 140; and webbing 160 during the same process, deposition or growthof that conductive material in the first, second and third openings. Insome cases, simultaneously forming the conductive material includeselectrolytic plating of conductor material in the first, second andthird openings (e.g., on the electroless plating of seed layer).

In some cases of these, after simultaneously forming the conductivematerial, the mask is removed from between the first level upper groundcontacts 120, the first level upper data signal contacts 130 and 140,and the first level ground webbing structure 160. This removal may alsoinclude removing the seed layer from between the openings. Thendielectric material 103 a (e.g., SiO2 or SiN3) is deposited where themask was removed from between the first level upper ground contacts, thefirst level upper data signal contacts, and the first level groundwebbing structure. In some cases, forming the mask includes forming ablanket layer of mask material and etching the blanket layer to form thefirst, second and third openings.

A second example of embodiments of block 420 may include (e.g., prior toforming the upper layer 210 of the first interconnect level), forming ablanket layer of dielectric material (e.g., blanket of dielectric 103 aprior to etching) over a top surface of a lower layer 212 of the firstinterconnect level L1. Then forming a mask over a top surface of theblanket layer of dielectric material, the mask having (1) first openingsover ground via contacts 122 of the lower layer 212 and in which to formthe first level upper ground contacts 120 of Level L1, (2) secondopenings over data signal via contacts 132 and 142 of the lower layer212 and in which to form the first level upper data signal contacts 130and 140 of Level L1, and (3) third openings over dielectric 103 b of thelower layer 212 and in which to form the first level ground webbingstructure 160. In this case, the first openings may be horizontally opento and in communication with the third openings. Block 420 may theninclude etching away portions of the blanket layer of dielectricmaterial in the first, second and third openings (e.g., and to the topsurface of the lower layer 212). Block 420 may then includesimultaneously forming (e.g., plating) conductive material to form thefirst level upper ground contacts 120 in the first openings, the firstlevel upper data signal contacts 130 and 140 in the second openings, andthe first level ground webbing structure 160 in the third openings ofLevel L1.

In some of these cases, simultaneously forming the conductive materialmay include forming that conductive material of the contacts 120, 130and 140; and webbing 160 during the same process, deposition or growthof that conductive material in the first, second and third openings. Insome cases, simultaneously forming the conductive material includeselectroless plating of a seed layer, and then electrolytic plating ofconductor material in the first, second and third openings.

In some of these cases, after simultaneously forming the conductivematerial in the second example embodiments of block 420, the mask isremoved from above the dielectric layer 103 a between the first levelupper ground contacts 120, the first level upper data signal contacts130 and 140, and the first level ground webbing structure 160. Thisleaves dielectric material 103 a (e.g., SiO2 or SiN3) between the firstlevel upper ground contacts 120, the first level upper data signalcontacts 130 and 140, and the first level ground webbing structure 160.

In some cases, deposition or growing of conductor material in blocks 410and 420 may be by chemical vapor deposition (CVD) or by atomic layerdeposition (ALD). In some cases, deposition or growing of dielectricmaterial in block 410 and 420 may be by chemical vapor deposition (CVD)or by atomic layer deposition (ALD). It can be appreciated that thedescriptions herein for blocks 410 and 420 may also include polishing(e.g., chemical mechanical polishing) or planarizing surfaces as neededto perform the descriptions herein of blocks 410 and 420.

It can be appreciated that the descriptions herein for blocks 410 and420 may be repeated to form additional levels similar to level L1. Suchdescriptions may include forming additional levels similar to level L1,below level L1 (e.g., to form level L2, etc.); or above level L1 (e.g.,to form a new top level L1 such that level L2 is now level L2).

In some cases, only block 420 of process 400 is performed (e.g., to formlayer 210). In other cases, only blocks 410-420 of process 400 areperformed (e.g., to form layers 210-212). In some cases, block 420 ofprocess 400 may be performed, then block 410, then block 420 repeatedfor another level (e.g., to form layers 210-232). In some cases, blocks410 and 420 of process 400 are repeated once (e.g., to form layers210-222), twice (e.g., to form layers 210-232), thrice (e.g., to formlayers 210-242), or four times (e.g., to form layers 210-252).

In some cases, any or all of height H1-H5 may be between 3 and 5 percentless than or greater than that described herein. In some cases, they maybe between 5 and 10 percent less than or greater than that describedherein.

In some cases, any or all of widths W1-W6 may represent a circulardiameter, or the maximum width (maximum distance from one edge toanother farthest edge from above) of an oval, a rectangle, a square, atriangle, a rhombus, a trapezoid, or a polygon.

In some cases, embodiments of (e.g., packages, systems and processes forforming) a conductive material ground webbing structure package, such asdescribed for FIGS. 1-4, provide quicker and more accurate data signaltransfer between the two IC's attached to a package by including a topinterconnect layer with a ground webbing structure (e.g., “webbing”) ofconductor material that reduces bump field crosstalk, signal typecluster-to-cluster crosstalk and in-cluster signal type crosstalk (e.g.,see FIG. 5). The ground webbing structure (e.g., of the top interconnectlevel, and optionally of other levels) may be formed connected to uppergrounding contacts to reduce bump field crosstalk, signal typecluster-to-cluster crosstalk and in-cluster signal type crosstalk bysurrounding each of the upper transmit and receive data signal contacts.

In some cases, embodiments of processes for forming a conductivematerial ground webbing structure package, or embodiments of aconductive material ground webbing structure package provide a packagehaving better components for providing stable and clean power (e.g.,from contacts 110), ground (e.g., from contacts 120), and high frequencytransmit (e.g., from contacts 130) and receive (e.g., from contacts 140)data signals between its top surface 106 (or layer 210) and (1) othercomponents attached to the package, such as at other contacts on the topsurface of the package where similar ground webbing structure(s) exist,or (2) other components of lower levels of the package that will beelectrically connected to the contacts through via contacts or traces ofthe package. The components may be better due to the addition of theconductive material ground webbing structure which reduces crosstalkbetween the data transfer contacts.

In some cases, embodiments of processes for forming a conductivematerial ground webbing structure package, or embodiments of aconductive material ground webbing structure package provide thebenefits embodied in computer system architecture features andinterfaces made in high volumes. In some cases, embodiments of suchprocesses and devices provide all the benefits of solving very highfrequency data transfer interconnect problems, such as between two ICchips or die (e.g., where hundreds even thousands of signals between twodie need to be routed), or for high frequency data transferinterconnection within a system on a chip (SoC) (e.g., see FIG. 5). Insome cases, embodiments of such processes and devices provide thedemanded lower cost high frequency data transfer interconnects solutionthat is needed across the above segments. These benefits may be due tothe addition of the conductive material ground webbing structure whichreduces crosstalk between the data transfer contacts.

In some cases, embodiments of processes for forming a conductivematerial ground webbing structure package or embodiments of a conductivematerial ground webbing structure package provide ultra-high frequencydata transfer interconnect in a standard package, such as a flip-chip xgrid array (FCxGA), where ‘x’ can be ball, pin, or land, or a flip-chipchip scale package (FCCSP, etc.) due to the addition of the conductivematerial ground webbing structure which reduce crosstalk between thedata transfer contacts.

In addition to this, such processes and devices can provide for directand local power, ground and data signal delivery to both chips. In somecases, embodiments of such processes and devices provide communicationbetween two IC chips or board ICs including memory, modem, graphics, andother functionality, directly attached to each other (e.g., see FIG. 5).These processes and devices provide increased input/output (IO)frequency data transfer at lower cost. These provisions and increasesmay be due to the addition of the conductive material ground webbingstructure which reduces crosstalk between the data transfer contacts.

FIG. 5 is a schematic top perspective view of a conductive materialground isolation webbing structure semiconductor device package uponwhich two integrated circuit (IC) chip or “die” are attached. FIG. 5shows isolation webbing structure package 500 having first area 510 uponwhich IC chip 520 is mounted; second area 512 upon which second IC chip522 is mounted; and electrical signal coupling 530 electrically couplingsignals of area 510 to signals of area 512. Area 510 may includedescriptions herein for package 100, such as by including zones 102,104, 105 and 107 (and interconnect levels and stacks thereof). Area 512may also include descriptions herein for package 100, such as byincluding zones 102, 104, 105 and 107 (and interconnect levels andstacks thereof). In some cases, package 500 represents package 100 ofany of FIGS. 1-4, having two areas with the structures shown in thosefigures.

Coupling 530 may include contacts, interconnects, traces, circuitry, andother features known for transmitting signals between area 510 and 512.For example, coupling 530 may include electronics data signal traces forcommunicating signals from receive contacts 130 of zone 510 to transmitcontact 540 of zone 512. Coupling 530 may also include electronics datasignal traces for communicating signals from receive contacts 130 ofzone 512 to transmit contact 540 of zone 510. Coupling 530 may alsoinclude ground traces or planes for providing ground signals to contacts120 of areas 510 and 512. Coupling 530 may also include power traces orplanes for providing power signals to contacts 110 of areas 510 and 512.Area 510 may include ground webbing 160, and optionally 162, andoptionally 164, as described herein. Area 512 may include ground webbing160, and optionally 162, and optionally 164, as described herein.

FIG. 5 may describe a cases where one IC chip 520 is mounted in area 510on top surface 106 (having level L1) of microelectronic substratepackage 500, while package 500 is also physically and electronicallyconnected to another IC chip 522 in area 512 on top surface 106 (havinglevel L1), so that package 500 can provide data signal transfer betweenthe two IC chips. Package 500 (e.g., coupling 530) may route hundreds oreven thousands of high frequency data signals between chips 520 and 522(e.g., between data signal contacts of those chips). Package 500 may besimilar to package 100, and may have two areas 510 and 512, each withground webbing (e.g., such as webbing 160) upon which or under whichchips 520 and 522 are mounted, respectively. Package 500 (e.g., each ofareas 510 and 512) may be formed of materials, have levels L1-L5, haveground webbings, have similar electrical characteristics, and havesimilar functional capabilities, and may be formed using a process(e.g., see FIG. 4) as described for forming package 100.

In some cases, embodiments of (e.g., packages, systems and processes forforming) a conductive material ground webbing structure package 500,provides quicker and more accurate data signal transfer between the twoIC chips 520 and 522 attached to the package by including a topinterconnect layer 210 with a ground webbing structure 160 (e.g., seeFIGS. 1-3) of conductor material in each of areas 510 and 512 thatreduces bump field crosstalk, signal type cluster-to-cluster crosstalkand in-cluster signal type crosstalk in each of areas 510 and 512.Ground webbing structures 160 (e.g., of the top interconnect level L1,and optionally webbings 162 and 164 of levels L2-L3) may be formedconnected to upper grounding contacts 120 in each of areas 510 and 512,to reduce bump field crosstalk, signal type cluster-to-cluster crosstalkand in-cluster signal type crosstalk by surrounding each of the uppertransmit and receive data signal contacts in each of areas 510 and 512(e.g., see FIGS. 1-3). In some cases, webbing structures 160 at areas510 and 512 reduce bump field crosstalk, signal type cluster-to-clustercrosstalk and in-cluster signal type crosstalk as described for package100.

In some cases, chip 520 and 522 may each be an IC chip type as describedfor attaching to package 100, such as a microprocessor, coprocessor,graphics processor, memory chip, modem chip, a next-level component, orother microelectronic chip device. In some cases, they are different ICchip types. In some cases, they are the same IC chip type. In somecases, they are both a microprocessor, coprocessor, or graphicsprocessor. In some cases, one is a memory chip and the other is amicroprocessor, coprocessor, or graphics processor.

Electrical coupling 530 may include circuitry between area 510 firstinterconnect level L1 and area 512 first interconnect level L1 tocommunicate data signals between the chip 520 and chip 522. In somecases, electrical coupling 530, area 510 ground webbing structure (e.g.,webbing 160 and optionally webbing 162 and optionally webbing 164 atarea 510) and area 512 ground webbing structure (e.g., webbing 160 andoptionally webbing 162 and optionally webbing 164 at area 510) areelectrically connected to communicate data signals between the chip 520and chip 522 at a frequency of between 7 and 25 GT/s. In some cases,they are connected to communicate from very low frequency transfer suchas from 50 mega hertz (MHz) to a GHz transfer level, such as greaterthan 40 GHz (or up to between 40 and 50 GHz).

Some embodiments of package 500 exclude chips 520 and 522. Here, package500 includes a first set of zones 102, 104, (105 and 107) of area 510,are connected or electrically coupled (e.g., through coupling 530) to asecond set of corresponding zones 102, 104, (105 and 107) of area 512through traces 138, 148, (118 and 128) respectively (e.g., see FIGS.2A-B). The first set of zones 102 and 104 of area 510 may be connectedor electrically coupled to a second set of corresponding zones 104 and102 of area 512 respectively so that the transmit signal zone 102 of thefirst set as shown is connected to the receive signal zone 104 of thesecond set, and vice versa. In this case, the first set of zones of area510 may be configured to be connectable to a chip (e.g., chip 520 atlevel L1) and the second set of zones of area 512 may be configured tobe connectable to a chip (e.g., chip 522 at level L1) so that the firstand second IC chips or devices can exchange data (e.g., using transmitdata signals and receive data signals as noted above) using zones 102and 104 of package 500. This provides a benefit of reduced cross talk asnoted herein during such data exchange due to or based on use groundwebbings 160, 162 and 164. In this case, package 500 may operate to linkthe first and second IC chips.

In some certain embodiments, descriptions herein for “each” or “each of”a feature, such as in “each of rows 170-190”, “each of the contacts”,“each zone”, “each of zones 102 and 104”, “each of zones 105 and 107”,“each of levels L1-L5”; the like for rows 170-190; the like for thecontacts (e.g., contacts 120, 130 or 140); the like for zones 102, 104,105 or 107; or the like for levels L1, L2, L3, L4 and L5 may be for mostof those features or for less than all of those feature in that row,zone or level. In some cases they may refer to between 80 and 90 percentof those features existing in that row, zone or level.

FIG. 6 illustrates a computing device in accordance with oneimplementation. FIG. 6 illustrates computing device 600 in accordancewith one implementation. Computing device 600 houses board 602. Board602 may include a number of components, including but not limited toprocessor 604 and at least one communication chip 606. Processor 604 isphysically and electrically coupled to board 602. In someimplementations at least one communication chip 606 is also physicallyand electrically coupled to board 602. In further implementations,communication chip 606 is part of processor 604.

Depending on its applications, computing device 600 may include othercomponents that may or may not be physically and electrically coupled toboard 602. These other components include, but are not limited to,volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flashmemory, a graphics processor, a digital signal processor, a cryptoprocessor, a chipset, an antenna, a display, a touchscreen display, atouchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, anaccelerometer, a gyroscope, a speaker, a camera, and a mass storagedevice (such as hard disk drive, compact disk (CD), digital versatiledisk (DVD), and so forth).

Communication chip 606 enables wireless communications for the transferof data to and from computing device 600. The term “wireless” and itsderivatives may be used to describe circuits, devices, systems, methods,techniques, communications channels, etc., that may communicate datathrough the use of modulated electromagnetic radiation through anon-solid medium. The term does not imply that the associated devices donot contain any wires, although in some embodiments they might not.Communication chip 606 may implement any of a number of wirelessstandards or protocols, including but not limited to Wi-Fi (IEEE 802.11family), WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution(LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT,Bluetooth, derivatives thereof, as well as any other wireless protocolsthat are designated as 3G, 4G, 5G, and beyond. Computing device 600 mayinclude a plurality of communication chips 606. For instance, firstcommunication chip 606 may be dedicated to shorter range wirelesscommunications such as Wi-Fi and Bluetooth and second communication chip606 may be dedicated to longer range wireless communications such asGPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.

Processor 604 of computing device 600 includes an integrated circuit diepackaged within processor 604. In some implementations, the integratedcircuit die of the processor includes one or more devices, such astransistors or metal interconnects. In some embodiments, the package ofthe integrated circuit die or processor 604 includes embodiments ofprocesses for forming a “ground webbing structure package” orembodiments of a “ground webbing structure package” as described herein.The term “processor” may refer to any device or portion of a device thatprocesses electronic data from registers and/or memory to transform thatelectronic data into other electronic data that may be stored inregisters and/or memory.

Communication chip 606 also includes an integrated circuit die packagedwithin communication chip 606. In accordance with anotherimplementation, the integrated circuit die of the communication chipincludes one or more devices, such as transistors or metalinterconnects. In some embodiments, the package of the integratedcircuit die or chip 606 includes embodiments of processes for forming a“ground webbing structure package” or embodiments of a “ground webbingstructure package” as described herein.

In further implementations, another component housed within computingdevice 600 may contain an integrated circuit die that includes one ormore devices, such as transistors or metal interconnects. In someembodiments, the package of the other integrated circuit die or chipincludes embodiments of processes for forming a “ground webbingstructure package” or embodiments of a “ground webbing structurepackage” as described herein.

In various implementations, computing device 600 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, computingdevice 600 may be any other electronic device that processes data.

EXAMPLES

The following examples pertain to embodiments.

Example 1 is a ground webbing structure package including a firstinterconnect level having an upper layer with first level groundcontacts, first level data signal contacts, and a first level groundwebbing structure; the first level ground webbing structure directlyconnected to the first level ground contacts and surrounding the firstlevel data signal contacts.

In Example 2, the subject matter can optionally include the package ofExample 1, the first interconnect level further including first levelpower contacts; and the first level data signal contacts including firstlevel receive data signal contacts and first level transmit data signalcontacts.

In Example 3, the subject matter can optionally include the package ofExample 2, the first interconnect level having (1) a first level powerand ground isolation zone, (2) a first level receive signal zone, and(3) a first level transmit signal zone; the first level power contactsand the first level ground isolation contacts disposed within a firstlevel power and ground isolation zone; the first level receive signalcontacts disposed within a first level receive signal zone that isadjacent to a first side of the first level power and ground isolationzone; the first level transmit signal contacts disposed within a firstlevel transmit signal zone that is adjacent to an opposite side of thefirst level power and ground isolation zone; and the first level groundwebbing structure extending from the first level ground isolationcontacts through the first side and into the first level receive signalzone; and the first level ground webbing structure extending from thefirst level ground isolation contacts through the opposite side and intothe first level transmit signal zone.

In Example 4, the subject matter can optionally include the package ofExample 1, further including a second interconnect level below the firstinterconnect level, the second interconnect level having second levelground contacts, second level data signal contacts, and a second levelground webbing structure; and the second level ground webbing structuredirectly connected to the second level ground contacts and surroundingthe second level data signal contacts.

In Example 5, the subject matter can optionally include the package ofExample 4, further including first level ground via contacts connectingthe first level ground signal contacts to the second level ground signalcontacts; and first level data signal via contacts connecting the firstlevel data signal contacts to the second level data signal contacts.

In Example 6, the subject matter can optionally include the package ofExample 5, the second interconnect level further including second levelpower contacts; the second level data signal contacts including secondlevel receive data signal contacts, and second level transmit datasignal contacts.

In Example 7, the subject matter can optionally include the package ofExample 1, wherein the first level ground webbing structure is connectedto electrical grounding to reduce bump field crosstalk, signal typecluster-to-cluster crosstalk and in-cluster signal type crosstalk.

In Example 8, the subject matter can optionally include the package ofExample 1, wherein the first level ground webbing structure is connectedto electrical grounding and the first level data signal contacts areconnected communicate data to a device at a frequency of between 7 and25 GT/s.

Example 9 is a system for communicating with an integrated circuit (IC)chip including the IC chip mounted on a ground webbing structurepackage, the ground webbing structure package including a first areahaving a first interconnect level having an upper layer with first levelground contacts, first level data signal contacts, and a first levelground webbing structure; the first level ground webbing structuredirectly connected to the first level ground contacts and surroundingthe first level data signal contacts; and data signal contacts of the ICchip electrically coupled to the first level data signal contacts of thepackage.

In Example 10, the subject matter can optionally include the system ofExample 9, wherein ground contacts of the IC chip are electricallycoupled to the first level ground contacts of the package.

In Example 11, the subject matter can optionally include the system ofExample 10, wherein the first level ground webbing structure providesquicker and more accurate data signal transfer through the first leveldata signal contacts, through first level data signal via contacts ofthe first level and through second level data signal contacts of asecond level of the package.

In Example 12, the subject matter can optionally include the system ofExample 9, wherein the IC chip is a first IC chip and the ground webbingstructure is a first ground webbing structure; the system furtherincluding a second IC chip mounted on the ground webbing structurepackage, the ground webbing structure package including a second areahaving a second area first interconnect level having an upper layer withfirst level ground contacts, first level data signal contacts, and asecond area first level ground webbing structure; the second area firstlevel ground webbing structure directly connected to the first levelground contacts and surrounding the first level data signal contacts ofthe second area; and data signal contacts of the second IC chipelectrically coupled to the first level data signal contacts of thesecond area.

In Example 13, the subject matter can optionally include the system ofExample 12, wherein the package includes electrical coupling between thefirst area first interconnect level and the second area firstinterconnect level to communicate data signals between the first IC chipand the second IC chip.

In Example 14, the subject matter can optionally include the system ofExample 13, wherein the first area ground webbing structure and thesecond area ground webbing structure reduce bump field crosstalk, signaltype cluster-to-cluster crosstalk and in-cluster signal type crosstalk.

In Example 15, the subject matter can optionally include the system ofExample 12, wherein the electrical coupling, the first area groundwebbing structure and the second area ground webbing structure areelectrically connected to communicate data signals between the first ICchip and the second IC chip at a frequency of between 7 and 25 GT/s.

Example 16 is a method of forming a conductive material ground webbingstructure package including forming an upper layer of a firstinterconnect level having conductive material first level upper groundcontacts, conductive material first level upper data signal contacts,and a conductive material first level ground webbing structure; thefirst level ground webbing structure directly connected to the firstlevel upper ground contacts and surrounding the first level upper datasignal contacts.

In Example 17, the subject matter can optionally include the method ofExample 16, further including, prior to forming the upper layer of thefirst interconnect level forming a lower layer of the first interconnectlevel having first level ground via contacts and first level data signalvia contacts; the first level ground via contacts attaching the firstlevel upper ground contacts to second level upper ground contacts; andthe first level data signal via contacts attaching the first level upperdata signal contacts to second level upper data signal contacts of asecond interconnect level disposed below the first interconnect level;the second interconnect level having a second level ground webbingstructure directly connected to the second level upper ground contactsand surrounding the second level upper data signal contacts.

In Example 18, the subject matter can optionally include the method ofExample 16, wherein forming the upper layer of the first interconnectlevel includes forming a mask over a top surface of a lower layer of thefirst interconnect level, the mask having (1) first openings over groundvia contacts of the lower layer and in which to form the first levelupper ground contacts, (2) second openings over data signal via contactsof the lower layer and in which to form the first level upper datasignal contacts, and (3) third openings over dielectric of the lowerlayer and in which to form the first level ground webbing structure; thefirst openings horizontally open to and in communication with the thirdopenings; then simultaneously forming the first level upper groundcontacts in the first openings, the first level upper data signalcontacts in the second openings, and the first level ground webbingstructure in the third openings.

In Example 19, the subject matter can optionally include the method ofExamples 18, further including after simultaneously forming, removingthe mask from between the first level upper ground contacts, the firstlevel upper data signal contacts, and the first level ground webbingstructure; then depositing dielectric where the mask was removed frombetween the first level upper ground contacts, the first level upperdata signal contacts, and the first level ground webbing structure.

In Example 20, the subject matter can optionally include the method ofExample 16, the first level upper ground contacts, the first level upperdata signal contacts, and first level ground webbing structure formed ofthe same conductor material during the same process, deposition orgrowth of the conductor material; wherein forming the mask includesforming a blanket layer of mask material and etching the blanket layerto form the first, second and third openings; and wherein simultaneouslyforming includes electroless plating of a seed layer and thenelectrolytic plating of the conductor material in the first, second andthird openings.

In Example 21, the subject matter can optionally include the method ofExample 16, wherein forming the upper layer of the first interconnectlevel includes forming a blanket layer of dielectric material over alower layer of the first interconnect level; forming a mask over a topsurface of the blanket layer of dielectric material, the mask having (1)first openings over ground via contacts of the lower layer in which toform the first level upper ground contacts, (2) second openings overdata signal via contacts of the lower layer in which to form the firstlevel upper data signal contacts, and (3) third openings over dielectricof the lower layer in which to form the first level ground webbingstructure; the first openings horizontally open to and in communicationwith the third openings; then etching away portions of the blanket layerof dielectric material in the first, second and third openings, and tothe top surface of the lower layer; then simultaneously forming thefirst level upper ground contacts in the first openings, the first levelupper data signal contacts in the second openings, and the groundwebbing structure in the third openings formed in the blanket layer ofdielectric material.

In Example 22, the subject matter can optionally include an apparatusincluding means for performing the method of any one of Examples 16-21.

The above description of illustrated implementations, including what isdescribed in the Abstract, is not intended to be exhaustive or to limitthe invention to the precise forms disclosed. While specificimplementations of, and examples for, the invention are described hereinfor illustrative purposes, various equivalent modifications are possiblewithin the scope, as those skilled in the relevant art will recognize.These modifications may be made to the invention in light of the abovedetailed description. For example, although the descriptions above showonly webbing structures 160, 162 and 164, at levels L1, L2 and L3, thosedescriptions can apply to fewer, more or different webbing structures.Embodiments of fewer such structures may be where only one or two ofstructures 160, 162 and 164 exist. Embodiments of more of suchstructures may be where additional webbing structures (in addition tostructures 160, 162 and 164) similar to one of structures 160, 162 and164 exist at a different level such as level L5 and/or level L4.Embodiments of different of such structures may be such as wherestructure 164 exists on Level L4 instead of level L3; or where structure164 exists on Level L5 instead of level L3.

Also, although the descriptions above show only zones 102, 104, 105 and107 of package 100 (e.g., having webbing structures 160, 162 and 164, atlevels L1, L2 and L3), those descriptions can apply to more or differentnumber of zones 102, 104, 105 and 107. Embodiments of different of suchzones 102, 104, 105 and 107 may be such as where any one or two of zones102, 104, or 105 does not exist.

Embodiments of more of such zones may be where a first set of zones 102,104, (105 and 107) as shown, are connected or electrically coupled to asecond set of corresponding zones 102, 104, (105 and 107), such asthrough traces 138, 148, (118 and 128) respectively (e.g., see FIG. 5).In this case, the first set of zones 102 and 104 may be connected orelectrically coupled to a second set of corresponding zones 104 and 102respectively so that the transmit signal zone 102 of the first set asshown is connected to the receive signal zone 104 of the second set, andvice versa. In this case, the first set of zones may be connected to afirst IC chip or device (e.g., at level L1) and the second set of zonesmay be connected to a second, different IC chip or device (e.g., atlevel L1) so that the first and second IC chips or devices can exchangedata (e.g., using transmit data signals and receive data signals asnoted above) using zones 102 and 104 of package 100. This provides abenefit of reduced cross talk as noted herein during such data exchangedue to or based on use ground webbings 160, 162 and 164. In this case,package 100 may operate to link the first and second IC chips.

The terms used in the following claims should not be construed to limitthe invention to the specific implementations disclosed in thespecification and the claims. Rather, the scope is to be determinedentirely by the following claims, which are to be construed inaccordance with established doctrines of claim interpretation.

1. A ground webbing structure package comprising: a first interconnectlevel having an upper layer with first level ground contacts, firstlevel data signal contacts, and a first level ground webbing structure;the first level ground webbing structure directly connected to the firstlevel ground contacts and surrounding the first level data signalcontacts.
 2. The package of claim 1, the first interconnect levelfurther comprising first level power contacts; and the first level datasignal contacts including first level receive data signal contacts andfirst level transmit data signal contacts.
 3. The package of claim 2,the first interconnect level having (1) a first level power and groundisolation zone, (2) a first level receive signal zone, and (3) a firstlevel transmit signal zone; the first level power contacts and the firstlevel ground isolation contacts disposed within a first level power andground isolation zone; the first level receive signal contacts disposedwithin a first level receive signal zone that is adjacent to a firstside of the first level power and ground isolation zone; the first leveltransmit signal contacts disposed within a first level transmit signalzone that is adjacent to an opposite side of the first level power andground isolation zone; and the first level ground webbing structureextending from the first level ground isolation contacts through thefirst side and into the first level receive signal zone; and the firstlevel ground webbing structure extending from the first level groundisolation contacts through the opposite side and into the first leveltransmit signal zone.
 4. The package of claim 1, further comprising: asecond interconnect level below the first interconnect level, the secondinterconnect level having second level ground contacts, second leveldata signal contacts, and a second level ground webbing structure; andthe second level ground webbing structure directly connected to thesecond level ground contacts and surrounding the second level datasignal contacts.
 5. The package of claim 4, further comprising: firstlevel ground via contacts connecting the first level ground signalcontacts to the second level ground signal contacts; and first leveldata signal via contacts connecting the first level data signal contactsto the second level data signal contacts.
 6. The package of claim 5, thesecond interconnect level further comprising second level powercontacts; the second level data signal contacts including second levelreceive data signal contacts, and second level transmit data signalcontacts.
 7. The package of claim 1, wherein the first level groundwebbing structure is connected to electrical grounding to reduce bumpfield crosstalk, signal type cluster-to-cluster crosstalk and in-clustersignal type crosstalk.
 8. The package of claim 1, wherein the firstlevel ground webbing structure is connected to electrical grounding andthe first level data signal contacts are connected communicate data to adevice at a frequency of between 7 and 25 GT/s.
 9. A system forcommunicating with an integrated circuit (IC) chip comprising: the ICchip mounted on a ground webbing structure package, the ground webbingstructure package including a first area having: a first interconnectlevel having an upper layer with first level ground contacts, firstlevel data signal contacts, and a first level ground webbing structure;the first level ground webbing structure directly connected to the firstlevel ground contacts and surrounding the first level data signalcontacts; and data signal contacts of the IC chip electrically coupledto the first level data signal contacts of the package.
 10. The systemof claim 9, wherein ground contacts of the IC chip are electricallycoupled to the first level ground contacts of the package.
 11. Thesystem of claim 10, wherein the first level ground webbing structureprovides quicker and more accurate data signal transfer through thefirst level data signal contacts, through first level data signal viacontacts of the first level and through second level data signalcontacts of a second level of the package.
 12. The system of claim 9,wherein the IC chip is a first IC chip and the ground webbing structureis a first ground webbing structure; the system further comprising: asecond IC chip mounted on the ground webbing structure package, theground webbing structure package including a second area having: asecond area first interconnect level having an upper layer with firstlevel ground contacts, first level data signal contacts, and a secondarea first level ground webbing structure; the second area first levelground webbing structure directly connected to the first level groundcontacts and surrounding the first level data signal contacts of thesecond area; and data signal contacts of the second IC chip electricallycoupled to the first level data signal contacts of the second area. 13.The system of claim 12, wherein the package includes electrical couplingbetween the first area first interconnect level and the second areafirst interconnect level to communicate data signals between the firstIC chip and the second IC chip.
 14. The system of claim 13, wherein thefirst area ground webbing structure and the second area ground webbingstructure reduce bump field crosstalk, signal type cluster-to-clustercrosstalk and in-cluster signal type crosstalk.
 15. system of claim 12,wherein the electrical coupling, the first area ground webbing structureand the second area ground webbing structure are electrically connectedto communicate data signals between the first IC chip and the second ICchip at a frequency of between 7 and 25 GT/s.
 16. A method of forming aconductive material ground webbing structure package comprising: formingan upper layer of a first interconnect level having conductive materialfirst level upper ground contacts, conductive material first level upperdata signal contacts, and a conductive material first level groundwebbing structure; the first level ground webbing structure directlyconnected to the first level upper ground contacts and surrounding thefirst level upper data signal contacts.
 17. The method of claim 16,further comprising, prior to forming the upper layer of the firstinterconnect level: forming a lower layer of the first interconnectlevel having first level ground via contacts and first level data signalvia contacts; the first level ground via contacts attaching the firstlevel upper ground contacts to second level upper ground contacts; andthe first level data signal via contacts attaching the first level upperdata signal contacts to second level upper data signal contacts of asecond interconnect level disposed below the first interconnect level;the second interconnect level having a second level ground webbingstructure directly connected to the second level upper ground contactsand surrounding the second level upper data signal contacts.
 18. Themethod of claim 16, wherein forming the upper layer of the firstinterconnect level comprises: forming a mask over a top surface of alower layer of the first interconnect level, the mask having (1) firstopenings over ground via contacts of the lower layer and in which toform the first level upper ground contacts, (2) second openings overdata signal via contacts of the lower layer and in which to form thefirst level upper data signal contacts, and (3) third openings overdielectric of the lower layer and in which to form the first levelground webbing structure; the first openings horizontally open to and incommunication with the third openings; then simultaneously forming thefirst level upper ground contacts in the first openings, the first levelupper data signal contacts in the second openings, and the first levelground webbing structure in the third openings.
 19. The method of claim18, further comprising: after simultaneously forming, removing the maskfrom between the first level upper ground contacts, the first levelupper data signal contacts, and the first level ground webbingstructure; then depositing dielectric where the mask was removed frombetween the first level upper ground contacts, the first level upperdata signal contacts, and the first level ground webbing structure. 20.The method of claim 16, the first level upper ground contacts, the firstlevel upper data signal contacts, and first level ground webbingstructure formed of the same conductor material during the same process,deposition or growth of the conductor material; wherein forming the maskincludes forming a blanket layer of mask material and etching theblanket layer to form the first, second and third openings; and whereinsimultaneously forming includes electroless plating of a seed layer andthen electrolytic plating of the conductor material in the first, secondand third openings.
 21. The method of claim 16, wherein forming theupper layer of the first interconnect level comprises: forming a blanketlayer of dielectric material over a lower layer of the firstinterconnect level; forming a mask over a top surface of the blanketlayer of dielectric material, the mask having (1) first openings overground via contacts of the lower layer in which to form the first levelupper ground contacts, (2) second openings over data signal via contactsof the lower layer in which to form the first level upper data signalcontacts, and (3) third openings over dielectric of the lower layer inwhich to form the first level ground webbing structure; the firstopenings horizontally open to and in communication with the thirdopenings; then etching away portions of the blanket layer of dielectricmaterial in the first, second and third openings, and to the top surfaceof the lower layer; then simultaneously forming the first level upperground contacts in the first openings, the first level upper data signalcontacts in the second openings, and the ground webbing structure in thethird openings formed in the blanket layer of dielectric material. 22.(canceled)